Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-20T09:32:07.306Z Has data issue: false hasContentIssue false
  • English
  • Français

Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE

Published online by Cambridge University Press:  10 February 2011

Shukun Duan ,
Xuegong Teng ,
Yenran Li ,
Yutian Wang ,
Peide Han  and
Dacheng Lu
Shukun Duan
Affiliation:
National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, CHINA, E-mail:, [email protected]
Xuegong Teng
Affiliation:
National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, CHINA, E-mail:, [email protected]
Yenran Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing CHINA 100083
Yutian Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing CHINA 100083
Peide Han
Affiliation:
Beijing Laboratory of Electron Microscopy Center of Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 2724, Beijing 100080, CHINA, E-mail:, [email protected]
Dacheng Lu
Affiliation:
Laboratory of Semiconductor Materials of Sciences, Institute of Semiconductors, The Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, CHINA, E-mail:, [email protected]
Get access

Abstract

We have studied the growth of GaN on (0001) sapphire and (111) spinel substrates by LP-MOVPE and compared the mosaic structure and cathodoluminescence for the heteroepitaxial films of GaN grown on these substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 207
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T. and Mukai, T., Jpn. J. Appl. Phys. Lett. 2, Lett. 34, L1332 (1995).Google Scholar
2. Khan, M.S., Kuznia, J.N., Bhattarai, A.R. and Olsen, D.T., Appl. Phys. Lett. 62, 1786 (1993).Google Scholar
3. Lester, S.D., Ponce, F.A., Craford, M.G. and Steigerwald, D.A., Appl. Phys. Lett, 66, 1249 (1995)Google Scholar
4. Duan, S.-K., Teng, X.-G., Gao, W.-B. and Li, Y.-Y., ActaPhotonica Sinica, 24, p. 105 (1995).Google Scholar
5. Neugebauer, J. and Chris G., Van de walle, Appl. Phys. Lett. 69, 503 (1996)Google Scholar
6. Rosner, S. J., Carr, E.C., Ludowise, M. J., Girolami, G., and Erikson, H.I., Appl. Phys. Lett. 70, p. 420(1997).Google Scholar