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M.O.S. Transistors with > 1 μm Thick Gate Oxide for Ionizing Radiation Dosimetry
Published online by Cambridge University Press: 21 February 2011
Abstract
The effects of ionizing radiation on MOS transistors with gate oxide thickness up to 2 μm have been investigated. The major focus of workers in this area has been on the hardening techniques of technologies. On the other side, our goal is to use MOS devices to reach higher sensitivities in order to detect small amounts of dose. Therefore, sensitivity as well as temperature response in the mil-std range and stability of the dosimeters have been studied.
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- Copyright © Materials Research Society 1993
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