Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:21:20.977Z Has data issue: false hasContentIssue false
  • English
  • Français

MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

Published online by Cambridge University Press:  15 March 2011

T. Kimoto ,
Y. Kanzaki ,
M. Noborio ,
H. Kawano  and
H. Matsunami
T. Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Katsura, Nishikyo, Kyoto 615-8510, Japan
Y. Kanzaki
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Katsura, Nishikyo, Kyoto 615-8510, Japan
M. Noborio
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Katsura, Nishikyo, Kyoto 615-8510, Japan
H. Kawano
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Katsura, Nishikyo, Kyoto 615-8510, Japan
H. Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Katsura, Nishikyo, Kyoto 615-8510, Japan
Get access

Abstract

4H-SiC(0001), (000-1), and (11-20) have been directly oxidized by N2O at 1300°C, and the MOS interfaces have been characterized. The interface state density has been significantly reduced by N2O oxidation on any face, compared to conventional wet O2 oxidation at 1150°C. Planar n-channel MOSFETs fabricated on lightly-doped 4H-SiC(0001), (000-1) and (11-20) faces have shown an effective channel mobility of 26, 43, and 78 cm2/Vs, respectively. The mobility decreased with increasing the doping concentration of p-body. SIMS analyses have revealed a clear pile-up of nitrogen atoms near the MOS interface. The thickness of interfacial SiCxOy layer can be decreased by utilizing N2O oxidation. The crystal face dependence of interface structure is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J8.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Dimitrijev, S., Li, H.F., Harrison, H.B., Sweatman, D., IEEE Trans. Electron Dev. Lett. 18, 175 (1997).Google Scholar
[2] Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Chanana, R., Weller, R.A., Pantelides, S.T., Feldman, L.C., Holland, O.W., Das, M.K. and Palmour, J.W., IEEE Electron Device Lett. 22, 176 (2001).Google Scholar
[3] Lipkin, L.A., Das, M.K. and Palmour, J.W., Mater. Sci. Forum 389–393, 985 (2002).Google Scholar
[4] Fukuda, K., Senzaki, J., Kojima, K., and Suzuki, T., Mat. Sci. Forum 433–436,567 (2003).Google Scholar
[5] Yano, H., Hirao, T., Kimoto, T., Matsunami, H., Asano, K. and Sugawara, Y., IEEE Electron Device Lett. 20, 611 (1999).Google Scholar
[6] Kimoto, T., Itoh, A., and Matsunami, H., phys. stat. sol. (b) 202, 247 (1997).Google Scholar
[7] Nicollian, E.H. and Brews, J.R., MOS Physics and Technology (John Wiley & Sons, New York, 1982).Google Scholar
[8] Yano, H., Kimoto, T., and Matsunami, H., Mat. Sci. Forum 353–356, 627 (2001).Google Scholar
[9] Saks, N.S., Mani, S.S., Agarwal, A.K., and Hegde, V.S., Mat. Sci. Forum 338–342, 737(2000).Google Scholar
[10] Saks, N.S., Silicon Carbide- Recent Major Advances, edited by Choyke, W.J., Matsunami, H., and Pensl, G. (Springer, Berlin, 2003), p.387.Google Scholar
[11] Kimoto, T., Yamamoto, T., Chen, Z.Y., Yano, H., and Matsunami, H., Mat. Sci. Forum 338–342, 189(2000).Google Scholar
[12] Dimitrijev, S., Harrison, H.B., Tanner, P., Cheong, K.Y., and Han, J., Silicon Carbide- Recent Major Advances, edited by Choyke, W.J., Matsunami, H., and Pensl, G. (Springer, Berlin, 2003), p.373.Google Scholar
[13] Afanas'ev, V.V., Bassler, M., Pensl, G., and Schulz, M., phys. stat. sol. (a) 162, 321 (1997).Google Scholar