SiC films were deposited on Si substrate by low pressure hot-wall CVD using C3H8 (5% in H2)-SiH4 (2.5% in H2)-H2 gas system at 1270°C and 1370°C. In this paper, we compare the electrical characteristics of MOS capacitors fabricated on the 3C-SiC films grown at high and low temperatures, 1370°C and 1270°C, respectively. Although the cross-sectional TEM images indicate similar micro-structural quality of the SiC/Si interface for both temperatures, a quicker elimination rate of stacking faults with increasing thickness was observed in the films grown at 1370°C. Rocking curves from XRD measurements also indicate better crystallinity of the films grown at 1370°C. On the other hand, atomic force microscopy shows that the average surface roughness reduces with the reduction in growth temperature. MOS capacitors were made on films grown at both temperatures and characterized by high-frequency capacitance-voltage (HFCV), conductance-voltage (G-V), and current-voltage (I-V) measurements at room temperature. The MOS capacitors fabricated on both films exhibit good and almost identical C-V characteristics. Measurements of current-voltage characteristics in accumulation region showed smaller leakage for the film deposited at 1270°C. It is concluded that the decrease of the deposition temperature from 1370°C to 1270°C does not bring any remarkable negative impact on the interface properties of fabricated MOS capacitors.