Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-26T19:47:48.586Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology, structure and optical properties of MOCVD grown pseudo-binary alloy nanowires of Zn1-xCdxSe on Si and GaAs substrates

Published online by Cambridge University Press:  15 February 2011

C. M. Ng ,
C. X. Shan ,
Z. Liu  and
S. K. Hark
C. M. Ng
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Hong Kong
C. X. Shan
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Hong Kong
Z. Liu
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Hong Kong
S. K. Hark
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Hong Kong
Get access

Abstract

Long and fine Zn1-xCdxSe pseudo-binary alloy nanowires of various compositions x covering the entire range were grown by metalorganic chemical vapor deposition, using diethlyzinc, dimethylcadmium and diisopropylselenide as precursors, on Si (100) and GaAs (100) substrates; sputtered gold was used as a catalyst to promote nanowire formation. By controlling the ratio of the flows of the precursors, the temperature and the pressure during growth, we obtained nanowires of desired compositions. The morphology, structure and optical properties of the nanowires were studied by various techniques, including secondary electron microscopy, atomic force microscopy, transmission electron microscopy, X-ray diffraction, photoluminescence, and Raman scattering. Depending on the substrate, composition and conditions of growth, either the zincblende or wurtzite nanowires were obtained. At compositions where the stable form would have been normally wurtzite, the zincblende form could be obtained under certain growth conditions. From the orientations of the ordered nanowires on the substrate surface, their directions of growth were deduced and confirmed by high resolution lattice imaging. The relationship between the band gap and the composition of the nanowires were measured and found to deviate from that of bulk alloys and epilayers. The interplay between the growth conditions and compositions and morphology of the nanowires are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 876: Symposium A – Nanoporous and Nanostructured Materials for Catalysis, Sensor and Gas Separation Applications , 2005 , R8.58
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morales, A. M. and Lieber, C. M., Science 269, 208 (1998).Google Scholar
2. Shi, W. S., Zheng, Y. F., Wang, N., Lee, C. S., and Lee, S. T., Adv. Material (Weinheim, Ger.) 13, 591 (2000).Google Scholar
3. Wu, Y., Messer, B., and Yang, P., Adv. Material (Weinheim, Ger.) 13, 1487 (2001).Google Scholar
4. Xia, Y., Yang, P., Sun, Y., Wu, Y., Mayers, B., Gates, B., Yin, Y., Kim, F., and Yan, H., Adv. Material (Weinheim, Ger.) 15, 353 (2003).Google Scholar
5. Duan, X., Lieber, C. M., Adv. Material. 12, 298 (2000).Google Scholar
6. Hu, J. T., Odom, T. W., Lieber, C. M., Acc. Chem. Res. 32, 435 (1999).Google Scholar
7. Wu, Y., Yang, P., Chem. Mater. 12, 605 (2000).Google Scholar
8. Kling, R., Kirchner, C., Gruber, T., Reuss, F., Waag, A., Nanotechnology 15, 1043 (2004).Google Scholar
9. Wu, Z. H., Sun, M., Mei, X. Y., Ruda, H. E., Appl. Phys. Lett. 85, 657 (2004).Google Scholar
10. Geng, B. Y., Zhang, L. D., Wang, G. Z., Xie, T., Zhang, Y. G. and Meng, G. W., Appl. Phys. Lett. 84, 2157 (2004).Google Scholar
11. Shankar, K. Shantha, Kar, Sohini, and Raychaudhuri, A. K., Appl. Phys. Lett. 84, 993 (2004).Google Scholar
12. Zhang, X. T., Liu, Z., Leung, Y. P., Li, Quan, and Hark, S. K., Appl. Phys. Lett. 83, 5533 (2003).Google Scholar
13. Zhang, X. T., Ip, K. M., Liu, Z., Leung, Y.P., Li, Quan, and Hark, S. K., Appl. Phys. Lett. 84, 2641 (2004).Google Scholar
14. Shan, C.X, Liu, Z., Ng, C. M., and Hark, S. K., Appl. Phys. Lett, (accepted, to be published).Google Scholar
15. Kim, Y. D., Klein, M. V., Ren, S. F., Chang, Y. C., Luo, H., Samarth, N., Furdyna, J. K., Phys. Rev. B49, 7262 (1994).Google Scholar
16. Valakh, M. Ya., Lisitsa, M. P., Pekar, G. S., Polysskii, G. N., Sidorenko, V. L., and Yaremko, A. M., Phys. Stat. Sol. (b) 113, 635 (1982).Google Scholar
17. Alonso, R. G., Suh, E. K., and Ramdas, A. K., Phy. Rev. B40, 3720 (1989).Google Scholar