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Morphology of Tantalum Nitride Thin Films Grown on Fused Quartz by Reactive High Power Impulse Magnetron Sputtering (HiPIMS)

Published online by Cambridge University Press:  25 May 2015

D. O. Thorsteinsson ,
T. K. Tryggvason  and
J. T. Gudmundsson
D. O. Thorsteinsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
T. K. Tryggvason
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
J. T. Gudmundsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44, Stockholm, Sweden
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Abstract

Thin tantalum nitride films were grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS) while varying the fractional N2 flow rate at fixed substrate temperature of 400°C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces slightly less dense films than does dcMS and the surface roughness is similar for both the HiPIMS and dcMS grown films. The deposition rate for HiPIMS is up to 80 % lower than for dcMS but it can be roughly doubled by lowering the magnetic field strength by 30 %.

Keywords

sputteringnitridex-ray diffraction (XRD)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1803: Symposium QQ – Plasma-Based Materials Science and Engineering , 2015 , mrss15-2136859
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Valleti, K., Subrahmanyam, A., Joshi, S. V., Phani, A. R., Passacantando, M., Santucci, S., Journal of Physics D: Applied Physics 41(4) (2008) 045409.CrossRefGoogle Scholar
Kim, S. K., Cha, B. C., Thin Solid Films 475(1-2) (2005) 202–207.CrossRefGoogle Scholar
Mellberg, A., Nicols, S. P., Rorsman, N., Zirath, H., Electrochemical and Solid-State Letters 7(11) (2004) G261–G263.CrossRefGoogle Scholar
Plummer, J. D., Deal, M. D., Griffin, P. B., Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Prentice Hall, New Jersey, 2000.Google Scholar
Kaloyeros, A. E., Eisenbraun, E., Annual Review of Materials Science 30(2000) 363–385.CrossRefGoogle Scholar
Shin, C.-S., Kim, Y.-W., Gall, D., Greene, J. E., Petrov, I., Thin Solid Films 402(12) (2002) 172–182.CrossRefGoogle Scholar
Helmersson, U., Lattemann, M., Bohlmark, J., Ehiasarian, A. P., Gudmundsson, J. T., Thin Solid Films 513(1-2) (2006) 1–24.CrossRefGoogle Scholar
Gudmundsson, J. T., Brenning, N., Lundin, D., Helmersson, U., Journal of Vacuum Science and Technology A 30(3) (2012) 030801.CrossRefGoogle Scholar
Gerstenberg, D., Calbick, C. J., Journal of Applied Physics 35(2) (1964) 402–407.CrossRefGoogle Scholar
Saha, R., Barnard, J. A., Journal of Crystal Growth 174(14) (1997) 495–500.CrossRefGoogle Scholar
Grosser, M., Münch, M., Brenner, J., Wilke, M., Seidel, H., Bienert, C., Roosen, A., Schmid, U., Microsystem Technologies 16(5) (2010) 825–836.CrossRefGoogle Scholar
Lee, W.-H., Lin, J.-C., Lee, C., Materials Chemistry and Physics 68(1-3) (2001) 266–271.CrossRefGoogle Scholar
Lee, G. R., Kim, H., Choi, H. S., Lee, J. J., Applied Surface Science 258(3) (2011) 1033–1037.CrossRefGoogle Scholar
Lee, G. R., Kim, H., Choi, H. S., Lee, J. J., Surface and Coatings Technology 201(9-11) (2007) 5207–5210.CrossRefGoogle Scholar
Arnalds, U. B., Agustsson, J. S., Ingason, A. S., Eriksson, A. K., Gylfason, K. B., Gudmundsson, J. T., Olafsson, S., Review of Scientific Instruments 78(10) (2007) 103901.CrossRefGoogle Scholar
Samuelsson, M., Lundin, D., Jensen, J., Raadu, M. A., Gudmundsson, J. T. and Helmersson, U., Surface and Coating Technology 202(2) 591–596 Google Scholar
Sproul, W.D., Christie, D. J. and Carter, D. C., “The Reactive Sputter Deposition of Aluminum Oxide Coatings Using High Power Pulsed Magnetron Sputtering (HPPMS)”, 47th Annual Society of Vacuum Coaters Technical Conference Proceedings, April 24 – 29, 2004, Dallas, TX, USA, p. 96–100.Google Scholar
Mishra, A., Kelly, P. J. and Bradley, J. W., Plasma Sources Science and Technology 19(4) 045014.CrossRefGoogle Scholar
JCPDS-ICDD File Card No. 32–1283 Google Scholar
JCPDS-ICDD File Card No. 26–985 Google Scholar
Magnus, F., Ingason, A. S., Olafsson, S. and Gudmundsson, J. T., IEEE Electron Device Letters, 33(7) (2012) 1045–1047.CrossRefGoogle Scholar