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Morphology of Optically Transparent Cubic Silicon Carbide Prepared by Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Michael W. Russell ,
Jaime A. Freitas Jr.  and
James E. Butler
Michael W. Russell
Affiliation:
NRC Postdoctoral Research Associate Naval Research Laboratory, Washington, DC 20375
Jaime A. Freitas Jr.
Affiliation:
Sachs/Freeman Associates, Landover, MD 20785
James E. Butler
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Crystals of cubic silicon carbide (3C-SiC) were grown in an RF-induction furnace on graphite substrates by atmospheric pressure chemical vapor deposition (APCVD) from a single precursor, methyltrichlorosilane (MTS) in hydrogen. The deposits were characterized by micro-Raman spectroscopy, x-ray diffraction, and atomic force and scanning electron microscopies. Above ˜1600°C preferential 〈110〉 growth directions were identified for the majority of the crystals. At intermediate deposition temperatures (1600–1700°C) the dominant morphology consisted of yellow prismatic crystals heavily twinned along {111 }and {111} At substrate temperatures exceeding ˜1750°C hexagonally-shaped {1111} oriented 3C-SiC platelets were formed with alternating {001 }/{ 101} edges. The dependence of nucleation density, film morphology and film orientation on deposition conditions will be discussed with emphasis on the growth of high quality single crystals of 3C-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 575
Copyright
Copyright © Materials Research Society 1996

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