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Morphology, Defects and Thermal Stability of SiGe grown on SOI

Published online by Cambridge University Press:  01 February 2011

Qianghua Xie ,
Mike Kottke ,
Xiangdong Wang ,
Mike Canonico ,
Ted White ,
Bich-Yen Nguyen ,
Alex Barr ,
Shawn Thomas  and
Ran Liu
Qianghua Xie
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Mike Kottke
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Xiangdong Wang
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Mike Canonico
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248
Ted White
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Austin, TX 78721
Bich-Yen Nguyen
Affiliation:
Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Austin, TX 78721
Alex Barr
Affiliation:
Crolles-2, Freescale Semiconductor, 870 rue Jean Monnet 38926 Crolles, Frances
Shawn Thomas
Affiliation:
Embedded Systems and Science Research Laboratory, Motorola Inc., Tempe AZ 85248
Ran Liu
Affiliation:
School of Micro-electronics, Fudan University, Shanghai 200433, China
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Abstract

SiGe/SOI films have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. For low Ge composition (∼ 20%), strain relaxation in the SiGe layer is minimal (<0.25%). For higher Ge content (32%), the tensile strain in a Si capping layer grown on top of SiGe/SOI is 0.46% (a stress of 0.81 GPa). TEM has revealed that most of the resulting defects at the SiGe/SOI interface and move downward. The misfit dislocation (MD) linear density is 17/μm, being consistent with the strain relaxation of the SiGe layer as determined by Raman spectroscopy. Upon thermal annealing, residual strain in the SiGe films has been further relaxed via two major routes (a) introduction of more MDs, and (b) development of surface undulation. High strain relaxation has been achieved in a SiGe layer grown on a higher-Ge content buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E3.8
Copyright
Copyright © Materials Research Society 2005

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