Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:46:46.271Z Has data issue: false hasContentIssue false

Morphology Control of Pulsed-Laser Deposited Ag Quantum Dots

Published online by Cambridge University Press:  11 February 2011

Kinuyo Machi
Affiliation:
Nara Machinery Co., Ltd. 2–5–7, Jonanjima, Ootaku, Tokyo 143–0002, Japan
Sanshiro Nagare
Affiliation:
Nara Machinery Co., Ltd. 2–5–7, Jonanjima, Ootaku, Tokyo 143–0002, Japan
Kenji Hamada
Affiliation:
Nara Machinery Co., Ltd. 2–5–7, Jonanjima, Ootaku, Tokyo 143–0002, Japan
Mamoru Senna
Affiliation:
Faculty of Science and Technology, Keio University, 3.14–1, Hiyoshi, Yokohama, Japan
Get access

Abstract

Self-organized Ag nanodots were deposited on Si(100) by a pulsed laser deposition method. A compact apparatus was specially developed for this purpose with Nd:YAG-laser. Factors dominating size and morphology of the nanodots were examined by systematically varying species and pressure of the gas in the deposition chamber, deposition time, and the target –substrate distance (TSD). Pulse frequency (10Hz), pulse width (8ns) and laser wavelength (266nm) were kept constant. The dot size increased with pressure in the range between 0.005Pa to 1Pa, in Ar gas. At pressures as high as 100Pa, dot size decreased again with slightly different morphology. Increasing deposition time from 3, 5, to 10min brought about an increase in the average dot size from 5±2.1nm, 9±2.4nm, 10±3.0nm, respectively, under the constant Ar pressure, 100Pa. It is particularly to be noted that decreasing TSD from 100mm to 50mm brought about an increase in the dot size from 5±2.1nm to 9±3.3nm at Ar pressure, 100Pa, and deposition time, 3min. We discuss factors making self-organized Ag nanodots, and proposed key values to evaluate homogenize of dots assembly.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liao, H. B., Xiao, R. F., Fu, J. S., Yu, P., Wong, G. K. L., Ping Sheng: Appl. Phys. Lett. 70, (1997), p. 1 Google Scholar
2. De, G., Tapfer, L., Catalano, M., Battaglin, G., Caccavale, F., Gonella, F., Mazzoldi, P., and Haglund, R. F. Jr,: Appl. Phys. Lett. 68, (1996), p. 3820 Google Scholar
3. Mazzoldi, P., Arnold, G. W., Battaglin, G., Bertoncello, R., Gonella, F., Nucl. Instrum. Methods Phys. Res. B 91, (1994), p. 478 Google Scholar
4. Afonso, C.N., Gonzalo, J., Serna, R., de Sande, J.C.G., Ricolleau, C., Grigis, C., Gandais, M., Hole, D.E., Townsend, P.D.: Appl. Phys. A69, (1999) S201 Google Scholar
5. Ballesteros, J.M., Serna, R., Solis, J., Afonso, C.N., Petford-Long, A.K., Osborne, D.H., Haglund, R.F. Jr,: Appl. Phys. Lett. 71 (1997), p.2445 Google Scholar
6. Sasaki, Takeshi, Koshizaki, Naoto, Yoon, Jong-Won, Beck, Kenneth M., J. Photochemistry and Photobiology A145 (2001) 1116 Google Scholar
7. Sasaki, Takeshi, Koshizaki, Naoto, The Review of Laser Engineering vol.28, No.6 (2000) (Japanese)Google Scholar