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Morphology and Dielectric Properties of Reactively Sputtered Aluminum Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

A. G. Randolph  and
S.K. Kurinec
A. G. Randolph
Affiliation:
Departments of Microelectronic Engineering and Materials Science and Engineering, Rochester Institute of Technology, Rochester, NY 14623,
S.K. Kurinec
Affiliation:
Departments of Microelectronic Engineering and Materials Science and Engineering, Rochester Institute of Technology, Rochester, NY 14623,
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Abstract

Aluminum nitride thin films (∼ 100 mn) have been deposited on silicon substrate by reactive sputtering using Al target in 1:1 Ar:N2 environment. The atomic force microscopy examination revealed continuous microcrystalline film structure. The Auger electron spectroscopic analysis show the presence of oxygen in the films. The annealing at 850 C in nitrogen is found to cause recrystallization and further oxidation of the films. The films can be characterized as lossy dielectrics with relative permittivity ∼ 10, higher than the bulk value of 8.9. Annealing the films is found to reduce anion vacancies and improve the dielectric strength within a range of a few MV/cm in these thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 295
Copyright
Copyright © Materials Research Society 1997

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References

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