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Morphological Features of the Solid-Liquid Interface of a Gallium Film

Published online by Cambridge University Press:  21 February 2011

Richard D. Robinson  and
Ioannis N. Miaoulis
Richard D. Robinson
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Med ford, MA 02155
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Med ford, MA 02155
*
* author to whom correspondence should be addressed
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Abstract

This paper presents a new experimental method to investigate solid-liquid interface morphologies during Zone-Melting-Recrystallization at lower than the typical processing temperatures. Gallium films were used as a substitute for silicon films. In situ preliminary investigation identified three phenomena typically occurring during ZMR of silicon films: a) Transition from planar to dendritic to cellular morphologies was observed for different processing conditions; b) cell period proved to be dependant on scanning velocity; c) instabilities at the solidification interface at low heating strip temperatures were caused by supercooling and optical property variations as the material changed phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 139
Copyright
Copyright © Materials Research Society 1992

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References

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