Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T21:53:42.268Z Has data issue: false hasContentIssue false

Monte Carlo Simulations of Grain Boundary Sliding and Migration: Effect of Temperature and Vacancy

Published online by Cambridge University Press:  14 March 2011

P. Ballo
Affiliation:
Department of Physics, Faculty of Electrical Engineering and Information Technology Slovak University of Technology, Ilkovičova 3,812 19 Bratislava, Slovak Republic
N. Kioussis
Affiliation:
Department of Physics and Astronomy, California State University, Northridge, CA 91330-8268, U.S.A
Gang Lu
Affiliation:
Department of Physics and Astronomy, California State University, Northridge, CA 91330-8268, U.S.A
Get access

Abstract

We have carried out Monte Carlo (MC) simulations using the embedded atom potential to study the sliding and migration of the σ5 [001] (210) tilt grain boundary (GB) in aluminum and the effect of vacancies on the sliding properties. We find that the simulated annealing allows the system to gradually anneal to a global-minimum configuration, thus increasing the number of migrations and reducing the GB sliding energy barriers to about a factor of three compared to the corresponding “static” values. The distribution of atomic energies as a function of GB displacement, provide insight into which atoms are responsible for the GB migration. The vacancy formation energy is found to be lower when the vacancy is placed on the first layer to the boundary, in excellent agreement with ab initio electronic structure calculations. The sliding and migration properties depend very sensitively on the position of the vacancy in the GB core.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Valiev, R. Z., Khairullin, V. G. and Sheikh-Ali, A. D., Structure and property relationships for interfaces, eds Walter, J. L., King, A. H. and Tangri, K. p.309 (ASM International, Metals Park, Ohio).Google Scholar
2. Smith, D. A., Materials Interfaces, Atomic-level structure and properties, eds Wolf, D. and Yip, S. p. 212. (Cambridge UP, Cambridge 1992).Google Scholar
3. Wörner, C. H. and Cabo, A., Acta Metall., 35, 2801 (1987).Google Scholar
4. Bishop, G. H., Harrison, R. J., Kwok, T. and Yip, S., J. Appl. Phys. 53, 5609 (1982).Google Scholar
5. Chandra, N., and Dang, P., J. Mater. Sci. 34, 655 (1999).Google Scholar
6. Molteni, C., Marzari, N., Payne, M. C. and Heine, V., Phys. Rev. Lett. 79, 869 (1997).Google Scholar
7. Kirkpatrick, S., Cellar, D. C. and Vechi, M. P., Science 220, 671 (1983).Google Scholar
8. Geman, S. and Geman, D., IEEE Trans. Pattern. Anal. Mach. Intell. PAMI–6, 721 (1984).Google Scholar
9. Allen, M. P. and Tildesley, D. J., Computer Simulation of Liquids (Oxford UP, Oxford 1996).Google Scholar
10. Daw, M. S. and Baskes, M. I. Phys. Rev. B 29, 6443 (1984).Google Scholar
11. Foiles, S. M., Bashes, M. I. and Daw, M. S., Phys. Rev. B 33, 7983 (1986).Google Scholar
12. Mishin, Y., Farkas, D., Mehl, M.J. and Papaconstantopoulos, D.A., Phys. Rev. B 59, 3393 (1999).Google Scholar
13. Kittel, C., Introduction to Solid State Physics, Wiley -Interscience, New York (1986).Google Scholar
14. Lu, Gang and Kioussis, N., unpublished.Google Scholar
15. Schaefer, H.-E., Gugelmaier, R., Schmoltz, M. and Seeger, A., Mater.Sci.Forum,15–18,111(1987).Google Scholar