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Monte Carlo Simulation of Growth of Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson  and
Paul A. Taylor
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Paul A. Taylor
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

The authors have previously introduced a method, based on Monte Carlo techniques, for simulation of crystal growth processes in a continuous space. We have applied the method, initially used to simulate growth of two-dimensional Lennard-Jones systems, to treat growth of silicon in three dimensions. The interaction model for silicon is taken to be the recently introduced Stillinger-Weber (S-W) potential, which is a two- and threebody classical potential. Although the early stages of growth seem to be well modelled by the S-W potential, growth of even a single monolayer of epitaxial (111) silicon does not seem to be possible. Modifications to the S-W potential were considered, and found to be unacceptable physically. More accurate treatment of non-ideal atomic configuration energies is necessary to arrive at physically realistic growth simulations.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 63: Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials , 1985 , 151
Copyright
Copyright © Materials Research Society 1986

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References

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