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Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure

Published online by Cambridge University Press:  21 February 2011

I. H. Oguzman ,
J. Kolnik ,
K.F. Brennan ,
R. Wang  and
P. P. Ruden
I. H. Oguzman
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, [email protected]
J. Kolnik
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, [email protected]
K.F. Brennan
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, [email protected]
R. Wang
Affiliation:
Department of EE, University of Minnesota, Minneapolis, MN 55455
P. P. Ruden
Affiliation:
Department of EE, University of Minnesota, Minneapolis, MN 55455
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Abstract

In this paper, we present ensemble Monte Carlo based calculations of the steady state hole transport properties, i.e. average energy, drift velocity, and band occupancy of zincblende GaN. The Monte Carlo calculation includes the full details of the valence bands and a numerically determined scattering rate derived from an empirical pseudopotential calculation. Calculations are made for electric field strengths up to 1000 kV/cm. It is found that the average hole energies are much lower than the corresponding electron energies at comparable electric field strengths, and that some anisotropy in the drift velocity and average energy appears at the higher fields examined here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 479
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Khan, M. A., Skogman, R. A. and Van Hove, J. M., Appl. Phys. Lett. 56, 1257 (1990).Google Scholar
2 Khan, M. A., Kuznia, J. N., Olson, D. T., George, T. and Pike, W. T., Appl. Phys. Lett. 63, 3470 (1993).Google Scholar
3 Khan, M. A., Kuznia, J. N., Olson, D. T., Schaff, W. J., Burm, J. W. and Shur, M. S., Appl. Phys. Lett. 65, 1121 (1994).Google Scholar
4 Nakamura, S., Senoh, M. and Mukai, T., Appl. Phys. Lett. 62, 2390 (1993).Google Scholar
5 Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992) and references therein.Google Scholar
6 Das, P. and Ferry, D. K., Solid-State Electron. 19, 851 (1976).Google Scholar
7 Littlejohn, M. A., Hauser, J. R. and Glisson, T. H., Appl. Phys. Lett. 26, 625 (1975).Google Scholar
8 Mansour, N. S., Kim, K. W. and Littlejohn, M. A., J. Appl. Phys. 77, 2834 (1995).Google Scholar
9 Gelmont, B., Kim, K. and Shur, M., J. Appl. Phys. 74, 1818 (1993).Google Scholar
10 Kolnik, J., Oguzman, I. H., Brennan, K. F., Wang, R., Ruden, P. P. and Wang, Y., J. Appl. Phys. 78, 1033 (1995).Google Scholar
11 Fischetti, M. V. and Laux, S. E., Phys. Rev. B 38, 9721 (1988).Google Scholar
12 Hinckley, J. M. and Singh, J., Phys. Rev. B 41, 2912 (1990).Google Scholar
13 Sano, N. and Yoshii, A., Phys. Rev. B 45, 4171 (1992).Google Scholar
14 Stobbe, M., Redmer, R. and Schattke, W., Phys. Rev. B 49, 4494 (1994).Google Scholar
15 Chang, Y. C., Ting, D. Z.-Y., Tang, J. Y. and Hess, K., Appl. Phys. Lett. 42, 76 (1983).Google Scholar