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Monte Carlo Calculation Of High- And Low-Field AlxGa1−xN Electron Transport Characteristics

Published online by Cambridge University Press:  10 February 2011

J.D. Albrecht ,
R. Wang ,
P.P. Ruden ,
M. Farahmand ,
E. Bellotti  and
K.F. Brennan
J.D. Albrecht
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
R. Wang
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
P.P. Ruden
Affiliation:
Department of Electrical and Computer Engineering University of Minnesota, Minneapolis, MN 55455
M. Farahmand
Affiliation:
School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332
E. Bellotti
Affiliation:
School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332
K.F. Brennan
Affiliation:
School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332
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Abstract

The Monte Carlo technique is used to simulate electron transport in bulk, wurtzite phase AlxGa1−xN. A multi-valley analytical band model consisting of five spherical, non-parabolic conduction band valleys at the Γ, U, M, and K symmetry points of the Brillouin zone is matched to band structures of GaN and AlN. Parameters for the AlxGa1−xN alloy are obtained by linear interpolation. The Monte Carlo simulations are performed for ambient temperatures in the range of 300K to 600K. Scattering mechanisms taken into account include ionized impurity scattering and alloy scattering, in addition to deformation potential scattering (intra- and inter-valley), and polar optical phonon scattering. We present results for the electron steady-state drift velocity and the valley occupancy for electric fields up to 500 kV/cm. Low-field drift mobilities are extracted from the Monte Carlo calculations as functions of the electron concentration, of the ambient temperature, and of the alloy composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 815
Copyright
Copyright © Materials Research Society 1998

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