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Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector

Published online by Cambridge University Press:  10 February 2011

D. K. Sengupta ,
S. D. Gunapala ,
S. V. Bandara ,
F. Pool ,
J. K. Liu ,
M. McKelvey ,
E. Luong ,
J. Torezan ,
J. Mumulo  and
W. Hong
...Show all authors
D. K. Sengupta
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
S. D. Gunapala
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
S. V. Bandara
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
F. Pool
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
J. K. Liu
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
M. McKelvey
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
E. Luong
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
J. Torezan
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
J. Mumulo
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
W. Hong
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
J. Gill
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
G. E. Stillman
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
A. P. Curtis
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Kim
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
L. J. Chou
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
P. J. Mares
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Feng
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
K. C. Hseih
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. L. Chuang
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. G. Bishop
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Y. C. Chang
Affiliation:
Microelectronics Laboratory, Department of Electrical Engineering, Department of Physics & Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
H. C. Liu
Affiliation:
Institute of Microstructural Sciences, National Research Council, Canada KIA 0R6
W. I. Wang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, NY 11007
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Abstract

A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 – 5.3 μm and 7.5 – 14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and latticematched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3 – 5.3mu;m and 7.5 – 14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is ∼0.065A/W at 4.9μm and ∼0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3 – 5.3μm and 7.5 – 14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 205
Copyright
Copyright © Materials Research Society 1998

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