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Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?

Published online by Cambridge University Press:  10 February 2011

Alp H. Gencer  and
Scott T. Dunham
Alp H. Gencer
Affiliation:
Department of Electrical and Computer Engineering Boston University, Boston, MA 02215
Scott T. Dunham
Affiliation:
Department of Electrical and Computer Engineering Boston University, Boston, MA 02215
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Abstract

Accurate modeling of extended defect kinetics is of primary importance for predictive modeling of transient enhanced diffusion (TED). Our previously developed model accurately accounts for extended defects and can be used predictively for TED. Using some experimental knowledge about the distribution of the extended defect population we can simplify our model. We demonstrate that reducing the number of solution variables by one doesn't affect the predictive capabilities of the model for extended defect kinetics and TED. However, some caution has to be used when applying the same principles to modeling of dopant deactivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 105
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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