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Molecular-Dynamics Study of the Growth of Si1-x Gex on Si(100)2×1

Published online by Cambridge University Press:  25 February 2011

Stéphane Ethier  and
Laurent J. Lewis
Stéphane Ethier
Affiliation:
Département de physique et Groupe de recherche sur les couches minces, Université de Montréal, CP. 6128, Succ. A, Montréal, Québec, Canada H3C 3J7.
Laurent J. Lewis
Affiliation:
Département de physique et Groupe de recherche sur les couches minces, Université de Montréal, CP. 6128, Succ. A, Montréal, Québec, Canada H3C 3J7.
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Abstract

We use molecular-dynamics simulations to study the growth of pure Si, Si0.5Ge0.5 and pure Ge on the reconstructed (100) surface of Si. The atoms interact with one another via effective potentials of the Stillinger-Weber form with parameters adjusted such as to describe all types of triplet interactions. Motivated by recent experimental studies of molecular-beam epitaxial films,1 we examine in particular the structure of the deposits for various substrate temperatures. We also examine the relaxation of the structure resulting from high-temperature annealing. Finally, we investigate the interdiffusion of the species at the substrate-deposit interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 371
Copyright
Copyright © Materials Research Society 1991

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References

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