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Molecular-Dynamics Simulations of Laser-Ablation and Ionassisted Thin Film Deposition

Published online by Cambridge University Press:  01 January 1992

H. Feil ,
J.S.C. Kools  and
J. Dieleman
H. Feil
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
J.S.C. Kools
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
J. Dieleman
Affiliation:
DSA Consultants, Geraniumlaan 11, 5582 GD Waalre, The Netherlands
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Abstract

Molecular dynamics simulations are performed of Cu thin film growth on Cu (111). Ion-Assisted Deposition is simulated by bombarding the substrate with Cu+ ions with a kinetic energy of 80 eV, while 1 eV Cu atoms are used for the simulation of Laser Ablation Deposition. It appears that Ion-Assisted Deposition leads to sputtering, enhanced surface mobility, surface disorder, mixing and rather deep damage. This is discussed in some detail. Laser Ablation Deposition, using laser fluences just above the ablation threshold, does not lead to damage and mixing. Sharper interfaces and more perfect heterostructures and superlattices can be produced using Laser Ablation Deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 75
Copyright
Copyright © Materials Research Society 1993

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References

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