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Molecular volume and polarizability in the amorphous dielectric Zr0.2Sn0.2Ti0.6O2

Published online by Cambridge University Press:  26 February 2011

S. C. Barron  and
R. B. van Dover
S. C. Barron
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, 214 Bard Hall, Cornell University, Ithaca, NY, 14853, United States, 607 255 3615, 607 255 2365
R. B. van Dover
Affiliation:
[email protected], Cornell University, Materials Science and Engineering, United States
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Abstract

The dielectric constant of a material is strongly dependent on both the polarizability and the density of the material through the Clausius Mossotti equation. While the atomic polarizability depends on the stoichiometry of the constituent atoms, the molecular polarizability is a function of the atoms’ short range bonding structure and hence can be strongly dependent on processing conditions. Since the density of the material also depends on the thermally activated diffusivity of atoms during processing, varying the processing temperatures has an effect on both the molecular polarizability and the density. The dielectric constant of Zr0.2Sn0.2Ti0.6O2 is shown to be a strong function of the substrate temperature during sputter deposition with the highest value ∼55 at 200 °C and lower values at both higher and lower process temperatures. We have investigated the bonding structure and density of the oxide dielectric deposited at a variety of substrate temperatures in order to elucidate the relative effects of each.

Keywords

dielectricamorphousfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-65
Copyright
Copyright © Materials Research Society 2006

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