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A Molecular Rebonding Bistable Defect in Silicon: the Interstitial Carbon-Substitutional Carbon Pair

Published online by Cambridge University Press:  26 February 2011

L. W. Song ,
X. D. Zhan ,
B. W. Benson  and
G. D. Watkins
L. W. Song
Affiliation:
Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
X. D. Zhan
Affiliation:
Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
B. W. Benson
Affiliation:
Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
G. D. Watkins
Affiliation:
Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
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Abstract

A new type of bistable center is observed in electron-irradiated Si and identified as an interstitial carbon-substitutional carbon pair by combining several spectroscopic techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon interstitialcy (each atom 3-fold coordinated) next to a 4-fold coordinated substitutional C atom. In the neutral state, the defect rearranges its bonds so that both C atoms are substitutional (4-fold coordinated) with a 2- fold coordinated Si atom nestled between. Configurational coordinate energy surfaces are determined for each of the three charge states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 79
Copyright
Copyright © Materials Research Society 1988

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References

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