Molecular dynamics simulations are used to study grain boundary sliding in pure and doped Cu bicrystals using both Lennard-Jones and Embedded-Atom Method potentials. Two tilt [100] grain boundaries are considered: the coincident site lattice Σ5 interface and a random high angle interface. Shear stress between 0.69 GPa and 1.61 GPa was applied to the bicrystals for a duration of 10 ps at ambient temperature (300K) and high temperature (800K). For the pure bicrystals, the sliding of the Σ5 interface with respect to the random interface was lower at 800K and higher at 300K. For the doped bicrystals, interstitial dopant atoms and substitutional dopant atoms with larger atomic radius were effective in retarding grain boundary sliding. These simulations will aid further work to determine how segregated dopant atoms alter the tensile properties of nanocrystalline metals.