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A Molecular Dynamics Study of Step Motions on Vicinal Silicon Surfaces

Published online by Cambridge University Press:  10 February 2011

A.M. Mazzone
A.M. Mazzone*
Affiliation:
C.N.R. LAMEL-via Gobetti 101 - Bologna-40129-Italy
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Abstract

A Molecular Dynamics simulation method has been applied to the motion of steps on a surface vicinal to {100}in Si. Undulation of the steps and ‘kissing sites’ are observed to arise from thermal fluctuations at 300°K. The dependence of the characteristic energy of these configurations on the terrace width complies with a free fermion picture which also includes dipolar and nearest neighbours interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 665
Copyright
Copyright © Materials Research Society 1998

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