Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-17T14:12:20.320Z Has data issue: false hasContentIssue false
  • English
  • Français

A Molecular Dynamics Study of Step Motions on Vicinal Silicon Surfaces

Published online by Cambridge University Press:  10 February 2011

A.M. Mazzone
A.M. Mazzone*
Affiliation:
C.N.R. LAMEL-via Gobetti 101 - Bologna-40129-Italy
Get access

Abstract

A Molecular Dynamics simulation method has been applied to the motion of steps on a surface vicinal to {100}in Si. Undulation of the steps and ‘kissing sites’ are observed to arise from thermal fluctuations at 300°K. The dependence of the characteristic energy of these configurations on the terrace width complies with a free fermion picture which also includes dipolar and nearest neighbours interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 665
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Alerhand, O.L., Vanderbilt, D., Meade, R.D., Joannopoulos, J.D., Phys.Rev.Lettrs. 61,1973,1988.Google Scholar
[2] Alerhand, O.L., Berker, A.N., Joannopoulos, J.D., Vanderbilt, D., Hamers, R. J., Demuth, J.E. Phys. Rev. Lettrs.,64,2406,1990.Google Scholar
[3] Tersoff, J., Pehlke, E., Phys.Rev.Lettrs.,6,68,816,1992.Google Scholar
[4] Jayaprakash, C., Rottman, C. and Saam, W.F., Phys.Rev.B.,30,11,6549,1984.Google Scholar
[5] Poon, T.W., Yip, S., Ho, P.S., Abraham, F.F., Phys.Rev.Lettrs.,65,2161,1990.Google Scholar
[6] Pimpinelli, A., Villain, J., Wolf, D.E., Metois, J.J., Heyraud, J.C., Elkinani, I., and Uimin, C., Surf.Science,295,143,1995.Google Scholar
[7] Kodiyalam, S., Khor, K.E., Bartelt, N.C., Williams, E.D.,DasSarma, S.,Phys.Rev B,51,8,5200,1995.Google Scholar