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Molecular Dynamics Studies of the Ion Beam Induced Crystallization in Silicon

Published online by Cambridge University Press:  21 February 2011

L.A. Marques ,
M.-J. Caturla ,
H. Huang  and
T. Díaz De La Rubia
L.A. Marques
Affiliation:
Chemistry and Materials Science Department, L-268, Lawrence Livermore National Laboratory, Livermore, CA 94551
M.-J. Caturla
Affiliation:
Dept. de Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, Spain.
H. Huang
Affiliation:
Dept. de Física Aplicada, Facultat de Ciencies, Universitat d'Alacant, Ap. 99, E-03080 Alacant, Spain.
T. Díaz De La Rubia
Affiliation:
Dept. de Física Aplicada, Facultat de Ciencies, Universitat d'Alacant, Ap. 99, E-03080 Alacant, Spain.
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Abstract

We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecular dynamics techniques. The growth of small crystal seeds embedded in the amorphous phase has been monitored for several temperatures in order to get information on the effect of the thermal temperature increase introduced by the incoming ion. The role of ion-induced defects on the growth has been also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 201
Copyright
Copyright © Materials Research Society 1996

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