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Molecular Dynamics Studies of the Adatom Induced Rearrangement of the Silicon {100} Surface

Published online by Cambridge University Press:  25 February 2011

Donald W. Brenner  and
Barbara J. Garrison
Donald W. Brenner
Affiliation:
Department of Chemistry, 152 Davey Laboratory, The Pennsylvania State University, University Park, PA 16802
Barbara J. Garrison
Affiliation:
Department of Chemistry, 152 Davey Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

A molecular dynamics simulation of the silicon adatom induced rearrangement of the silicon {100} symmetric dimer reconstructed surface has been performed. Surface diffusion is proposed to play a critical role in the reordering of this surface which leads to good epitaxy while it plays much less of a role in the reordering induced by an amorphous overlayer. These results are used to provide atomic-scale models which are consistent with high-energy ion channeling/blocking and LEED studies by Gossman and Feldman of the initial stages of silicon growth on this surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 77
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1 Gossman, H.-J., Feldman, L.C. and Gibson, W.M., Surf. Sci. 155, 413 (1985).Google Scholar
2 Gossman, H.-J. and Feldman, L.C., Phys. Rev. B 32, 6 (1985).Google Scholar
3 Schlier, R.E. and Farnsworth, H.E., J. Chem. Phys. 30, 917 (1959).Google Scholar
4 Applebaum, J.A. and Hamann, D.R., Surf. Sci. 74, 21 (1978).Google Scholar
5 Cardillo, M.J. and Becker, G.E., Phys. Rev. B 21, 1497 (1980).CrossRefGoogle Scholar
6 Yin, M.T. and Cohen, M.L., Phys. Rev. B 24, 2303 (1981).Google Scholar
7 Pandy, K.C., in Proceedings of the Seventeenth International Conference on the Physics of Semiconductors, edited by Chadi, D.J. and Harrison, W.A. (Springer-Verlag, New York, 1985), p.55.Google Scholar
8 See for example a) Abraham, F.F., Adv. Phys. 35, 1 (1986); b) W.G. Hoover, Molecular Dynamics (Springer-Verlag, Berlin, 1986).Google Scholar
9 See reference 8a, p. 91.Google Scholar
10 Brenner, D.W. and Garrison, B.J., to be published.Google Scholar
11 Brenner, D.W. and Garrison, B.J., Phys. Rev. B 34, 1304 (1986).Google Scholar
12 Hamers, R.J., Tromp, R.M. and Demuth, J.E., Phys. Rev. B 34, 5343 (1986).Google Scholar
13 See for example a) Adelman, S.A., Adv. Chem. Phys. 44, 143 (1980); b) R.R. Lucchese and J.C. Tully, Surf. Sci.137, 570 (1983).Google Scholar
14 Tersoff, J., Phys. Rev. Lett. 56, 632 (1986).CrossRefGoogle Scholar
15 Dodson, B.W., Phys. Rev. B 35, 2795 (1987).CrossRefGoogle Scholar
16 Tersoff, J. (private communication).Google Scholar