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Molecular Dynamics Studies of the Adatom Induced Rearrangement of the Silicon {100} Surface

Published online by Cambridge University Press:  25 February 2011

Donald W. Brenner  and
Barbara J. Garrison
Donald W. Brenner
Affiliation:
Department of Chemistry, 152 Davey Laboratory, The Pennsylvania State University, University Park, PA 16802
Barbara J. Garrison
Affiliation:
Department of Chemistry, 152 Davey Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

A molecular dynamics simulation of the silicon adatom induced rearrangement of the silicon {100} symmetric dimer reconstructed surface has been performed. Surface diffusion is proposed to play a critical role in the reordering of this surface which leads to good epitaxy while it plays much less of a role in the reordering induced by an amorphous overlayer. These results are used to provide atomic-scale models which are consistent with high-energy ion channeling/blocking and LEED studies by Gossman and Feldman of the initial stages of silicon growth on this surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 77
Copyright
Copyright © Materials Research Society 1987

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References

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