Hostname: page-component-6bf8c574d5-w79xw Total loading time: 0 Render date: 2025-02-18T06:37:11.923Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular Dynamics Studies of Impurity Segregation and Trapping.

Published online by Cambridge University Press:  21 February 2011

G. H. Gilmer ,
Christopher Roland  and
R. P. U. Karunasiri
G. H. Gilmer
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Christopher Roland
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. P. U. Karunasiri
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

The ability to make highly doped δ-layers in semiconductors depends on the rate of interchange of atoms between layers at the crystal surface. We have simulated molecular beam epitaxy on a silicon (100) surface covered with a monolayer of impurity atoms. The kinetics of impurity segregation to the surface was examined for various growth conditions and segregation energies. We find that segregation is facilitated by appreciable inter-layer diffusion of atoms in the top several layers. The amount of diffusion is much greater during deposition than it is when the beam is off.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 223
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Schneider, M, Schuller, I. K. and Rahman, A., Phys. Rev. B36, 1340 (1987).CrossRefGoogle Scholar
(2) Biswas, R., Grest, G. S. and Soukoulis, C. M., Phys. Rev. B 38, 8154 (1988).CrossRefGoogle Scholar
(3) Srivastava, D., Garrison, B. J. and Brenner, D. W., Phys. Rev. Lett. 63, 302 (1989).CrossRefGoogle Scholar
(4) Gilmer, G. H., Grabów, M. H. and Bakker, A. F., Materials Sci. and Engr. B6, 101 (1990).CrossRefGoogle Scholar
(5) Baeri, P., Foti, G., Poate, J. M., Campisano, S. U. and Cullis, A. G., Appl. Phys. Lett. 38, 800 (1981).CrossRefGoogle Scholar
(6) Gossmann, H.-J. and Schubert, E. F., in: CRC Critical Reviews in Solid State and Materials Science, to be published.Google Scholar
(7) Ni, W.-X., Knall, J., Hasan, M. A., Hansson, G. V., Sundgren, J.-E., Bamett, S. A., Markeit, L. G and Greene, J. E., Phys. Rev. B40, 10449 (1989).CrossRefGoogle Scholar
(8) Jorke, H., Surf. Science 193, 569 (1988).CrossRefGoogle Scholar
(9) Stillinger, F. H. and Weber, T. A., Phys. Rev. B31, 5262 (1985).CrossRefGoogle Scholar
(10) Grabów, M. H., Gilmer, G. H. and Bakker, A. F., Mat. Res. Soc. Symp. Proc. 141, 349 (1989).CrossRefGoogle Scholar
(11) Hockney, R. W. and Eastwood, J. W., in: “Computer Simulation using Particles”, (McGraw-Hill, New York, 1981).Google Scholar
(12) We assume that the rate of deposition is not so large that there is a significant probability that a beam atom will collide with the surface at a point that has not yet thermalized from a previous collision.Google Scholar