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Molecular Dynamics Simulation of Copper Thin Film Growth on β-Ta (002) Substrate

Published online by Cambridge University Press:  01 February 2011

Youhong Li  and
James B. Adams
Youhong Li
Affiliation:
Chemical and Materials Engineering Department, Arizona State University, Tempe, AZ 852876006, USA
James B. Adams
Affiliation:
Chemical and Materials Engineering Department, Arizona State University, Tempe, AZ 852876006, USA
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Abstract

Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interfacial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , J3.7
Copyright
Copyright © Materials Research Society 2002

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