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Molecular Dynamics Simulation of Copper Thin Film Growth on β-Ta (002) Substrate

Published online by Cambridge University Press:  01 February 2011

Youhong Li  and
James B. Adams
Youhong Li
Affiliation:
Chemical and Materials Engineering Department, Arizona State University, Tempe, AZ 852876006, USA
James B. Adams
Affiliation:
Chemical and Materials Engineering Department, Arizona State University, Tempe, AZ 852876006, USA
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Abstract

Tantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interfacial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , J3.7
Copyright
Copyright © Materials Research Society 2002

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References

[1] Vinci, R.P., Zielinski, E.M., Bravman, J.C., Thin solid films, 262 (1995) 142–153 Google Scholar
[2] Gladkikh, A, Karpovski, M, Palevski, A and Kaganovskii, Y. S., Journal of Physics D: Appl. Phys., 31 (1998) 1626–1629.Google Scholar
[3] Ryu, C., Loke, A. L. S., Nogami, T., Wong, S. S., Proceedings of IEEE International Reliability Physics Symposium, 1997, p201 Google Scholar
[4] Wang, J.Y. P., Zhang, H., Hashim, I., Dixit, G., Chen, F., Mat. Res. Soc. Proc. v564 1998 pp293–298 Google Scholar
[5] Kwon, Kee-Won, Ryu, C., Sinclair, R., Wong, S. S., Applied Physics Letters, 71(1997) pp3069–3071 Google Scholar
[6] Wong, S. S., Ryu, C., Lee, H., Loke, ALS., Kwon, K. W., Bhattacharya, S., Eaton, R., Faust, R., Mikkola, B., Mucha, J., Ormando, J., Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat.No.98EX102). IEEE, New York, NY, USA; 1998; 304 pp107–9.Google Scholar
[7] Zielinski, E.M., Vinci, R. P., and Bravmean, J.C., J. Elec. Mat. 24 (1995) pp1485–92Google Scholar
[8] Weiss, K., Riedel, S., Schulz, S. E., Schwerd, M., Helneder, H., Wendt, H. and Gessner, T., Microelectronics Engineering 49 (2000) 433–440 Google Scholar
[9] Rohrer, C.L., Modeling Simul. Mater. Sci. Eng. 2, 119(1994)Google Scholar
[10] Guellil, A.M. and Adams, J.B., J. Mater. Res., v7, 1992, pp639–652 Google Scholar
[11] Johnson, R. A. and Oh, D.J., Journal of Materials Research, v4. n5, 1989, pp1195–1201.Google Scholar
[12] Wang, Z., Li, Y., Adams, J.B., Surface Science, 450 (2000) 51–63.Google Scholar