Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Golding, T.D.
Dura, J.A.
Wang, W.C.
Zborowski, J.T.
Vigliante, A.
Chen, H.C.
and
Meyer, J.R.
1993.
Molecular beam epitaxial growth of Sb/GaSb multilayer structures: potential application as a narrow bandgap system.
Journal of Crystal Growth,
Vol. 127,
Issue. 1-4,
p.
777.
Dura, J. A.
Zborowski, J. T.
Golding, T. D.
Donnelly, D.
and
Covington, W.
1993.
Properties of InAs/(Ga, In)Sb strained layer superlattices grown on the {111} orientations.
Journal of Electronic Materials,
Vol. 22,
Issue. 8,
p.
1087.
Dura, J. A.
Pippenger, P. M.
Halas, N. J.
Xiong, X. Z.
Chow, P. C.
and
Moss, S. C.
1993.
Epitaxial integration of single crystal C60.
Applied Physics Letters,
Vol. 63,
Issue. 25,
p.
3443.
Dura, J. A.
Vigliante, A.
Golding, T. D.
and
Moss, S. C.
1995.
Epitaxial growth of Sb/GaSb structures: An example of V/III-V heteroepitaxy.
Journal of Applied Physics,
Vol. 77,
Issue. 1,
p.
21.
Plis, E.
Klein, B.
Myers, S.
Gautam, N.
Smith, E. P.
and
Krishna, S.
2013.
High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates.
IEEE Electron Device Letters,
Vol. 34,
Issue. 3,
p.
426.
Vallejo, Kevin D.
Garrett, Trent A.
Sautter, Kathryn E.
Saythavy, Kevin
Liang, Baolai
and
Simmonds, Paul J.
2019.
InAs(111)A homoepitaxy with molecular beam epitaxy.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
Vol. 37,
Issue. 6,
Vallejo, Kevin D.
Cabrera-Perdomo, Carlos I.
Garrett, Trent A.
Drake, Madison D.
Liang, Baolai
Grossklaus, Kevin A.
and
Simmonds, Paul J.
2023.
Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots.
ACS Nano,
Vol. 17,
Issue. 3,
p.
2318.
Chusovitina, S. V.
Subbotin, E. Y.
Chusovitin, E. A.
Goroshko, D. L.
Dotsenko, S. A.
Pyachin, S. A.
Gerasimenko, A. V.
and
Gutakovskii, A. K.
2023.
Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy.
Japanese Journal of Applied Physics,
Vol. 62,
Issue. SD,
p.
SD1005.
Nordstrom, Madison D.
Garrett, Trent A.
Reddy, Pooja
McElearney, John
Rushing, James R.
Vallejo, Kevin D.
Mukherjee, Kunal
Grossklaus, Kevin A.
Vandervelde, Thomas E.
and
Simmonds, Paul J.
2023.
Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays.
Crystal Growth & Design,
Vol. 23,
Issue. 12,
p.
8670.