Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-20T09:34:29.760Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular Beam Epitaxy on the (NH4)2Sx-Treated Surface of GaAs

Published online by Cambridge University Press:  25 February 2011

H. Oigawa ,
M. Kawabe ,
J.-F. Fan  and
Y. Nannichi
H. Oigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
M. Kawabe
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
J.-F. Fan
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Y. Nannichi
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

We have found that treatment with a solution of ammonium sulfide containing excess sulfur [(NH4) 2Sx] produced a stabilized surface of GaAs. The treated surface is covered with a monomolecular layer of sulfur, and oxygen atoms are prohibited from adsorbing chemically on this surface. We checked the durability of the treated surface to heat treatment to find that it was stable up to more than 500 °C. Epitaxial growth of an Al film was demonstrated on the (NH4) 2Sx-treated surface. The presence of sulfur atoms at the interface by this treatment was found to suppress the chemical reaction between the metal and GaAs. Low temperature GaAs epitaxy was demonstrated on the sulfide treated surface without conventional heat treatment. The surface treatment correlates with changes in Schottky barrier height with various metals, which suggests that the surface states of GaAs are decreased remarkably.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 427
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sandroff, C. J., Nottenburg, R. N., Bischoff, J. C. and Bhat, R., Appl. Phys. Lett. 51, 33 (1988)Google Scholar
[2] Fan, J.-F., Oigawa, H. and Nannichi, Y., Jpn. J. Appl. Phys. 27, L1331 (1988)Google Scholar
[3] Fan, J.-F., Oigawa, H. and Nannichi, Y., Jpn. J. Appl. Phys. 27, L2125 (1988)CrossRefGoogle Scholar
[4] Oigawa, H., Fan, J.-F., Nannichi, Y., Ando, K., Saiki, K. and Koma, A., Extended Abstracts 20th Conf. Solid State Devices & Materials, Tokyo, 1988 (Business Center for Academic Societies Japan, Tokyo, 1988) p.263 Google Scholar
[5] Oigawa, H., Fan, J.-F., Nannichi, Y., Ando, K., Saiki, K. and Koma, A., Jpn. J. Appl. Phys. 28, L340 (1989)CrossRefGoogle Scholar
[6] Carpenter, M.S., Melloch, M.R. and Dungan, T.E., Appl. Phys. Lett. 53, 66 (1988)CrossRefGoogle Scholar
[7] Horikoshi, Y., Kawashima, M. and Yamaguchi, H., Jpn. J. Appl. Phys. 25 L868 (1986)CrossRefGoogle Scholar
[8] Spicer, W.E., Chye, P.W., Skeath, P.R., Su, C.Y. and Lindau, I., J. Vac. Sci. & Technol. 16, 1422 (1979)CrossRefGoogle Scholar
[9] Nannichi, Y., Fan, J.-F., Oigawa, H. and Koma, A., Jpn. J. Appl. Phys. 27, L2367 (1988)CrossRefGoogle Scholar