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Molecular Beam Epitaxy Of Si/ZnS/Si(100) Heterostructures For Silicon-Based Quantum Devices

Published online by Cambridge University Press:  15 February 2011

Xiaochuan Zhou ,
Feng Li ,
Gregory F. Spencer  and
Wiley P. Kirk
Xiaochuan Zhou
Affiliation:
NanoFAB Center, Engineering-Physics Building, Texas A&M University College Station, TX 77843–4242
Feng Li
Affiliation:
NanoFAB Center, Engineering-Physics Building, Texas A&M University College Station, TX 77843–4242
Gregory F. Spencer
Affiliation:
NanoFAB Center, Engineering-Physics Building, Texas A&M University College Station, TX 77843–4242
Wiley P. Kirk
Affiliation:
NanoFAB Center, Engineering-Physics Building, Texas A&M University College Station, TX 77843–4242
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Abstract

Special methods were developed to grow Si/ZnS/Si heterostructures for the purpose of developing silicon-based quantum devices. An arsenic passivation technique was used on silicon surfaces for the growth of ZnS. The effectiveness of this surface passivation was demonstrated by the improved crystal quality and decreased heterostructural interface-state density. A two-step growth method was developed for the epitaxial growth of silicon on ZnS surfaces. In this method the normal silicon epitaxial growth was preceded by a solid phase epitaxy process. Single crystal films of silicon were successfully grown on ZnS surfaces. Our discussion addresses two key issues: crystal defects and the density of interface states. The results of RHEED (reflection high energy electron diffraction), C-V (capacitance voltage), and SIMS (secondary ion mass spectroscopy) measurements are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 3
Copyright
Copyright © Materials Research Society 1995

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References

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