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Molecular Beam Epitaxy of GexSi1-x/(Si, Ge) Strained-Layer Heterostructures and Superlattices

Published online by Cambridge University Press:  26 February 2011

J. C. Bean
J. C. Bean*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

This paper reviews recent work on GexSi1-x/Si(100) strained-layer epitaxy and reports new findings on GexSi1-x/Si(111) and GexSil1-x/Ge(100) growth as well as results on modulation doping. Layer synthesis and evaluation techniques are described along with tabulations of strain and critical layer thickness data. Evaluation techniques include Low Energy Electron Diffraction, Rutherford backscattering, X-ray diffraction, Raman scattering and cross-sectional Transmission Electron Microscopy. Synthesized structures range from simple heterojunctions to 100 period superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 245
Copyright
Copyright © Materials Research Society 1985

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References

[1] de Jong, T., Douma, W. A. S., van der Veen, J. F., Saris, F. W., and Haisma, H., Appl. Phys. Lett. 42, 1037 (1983).Google Scholar
[2] Van der Merwe, J. H. and Ball, C. A. B. in Epitaxial Growth, edited by Matthews, J. (Academic, New York, 1975), Part b.Google Scholar
[3] Kasper, E., Herzog, H. J. and Kibbel, H., Appl. Phys. 8, 199 (1975).CrossRefGoogle Scholar
[4] Kasper, E. and Pabst, W., Thin Solid Films, 37, L5 (1976).Google Scholar
[5] Kasper, E. and Herzog, H. J., Thin Solid Films, 44, 357 (1977).Google Scholar
[6] Bean, J. C., Chap. 4, Impurity Doping Processes in Silicon, F. F. Y. Wang Ed., North Holland, Amsterdam(1981).Google Scholar
[7] Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T. and Lynch, R. T., Apph. Phys. Lett. 44, 102 (1984).Google Scholar
[8] Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S. and Robinson, I. K., J. Vac. Sci. Technol. A 2(2), 436 (1984).Google Scholar
[9] Fiory, A. T., Bean, J. C., Feldman, L. C. and Robinson, I. K., J. Apph. Phys. 56(4), 1227 (1984).Google Scholar
[10] People, R., Bean, J. C., Lang, D. V., Sergent, A. M., Störmer, H. L., Wecht, K. W., Lynch, R. T. and Baldwin, K., to be published Appl. Phys. Lett., Dec. 1984.Google Scholar
[11] People, R., Bean, J. C. and Lang, D. V., submitted to J. Vac. Sci. Technol. A.Google Scholar
[12] Kline, J. S., Pollack, F. H. and Cardona, M., Helv-Phys. Acta 41, 968 (1968).Google Scholar
[13] Braunstein, R., Moore, A. R. and Herman, R., Phys. Rev. 109, 695 (1958).Google Scholar
[14] Moriarity, J. A. and Krishnamurthy, S., J. Apph. Phys. 54, 1892 (1983).Google Scholar
[15] Krishnamurthy, S., Ph.D. Thesis Univ. of Cincinnati, Dept. Physics (1984).Google Scholar
[16] Bean, J. C. and Sadowski, E. A., J. Vac. Sci. Technol. 20, 137 (1982).Google Scholar
[17] Bean, J. C., Becker, G. E., Petroff, P. M. and Seidel, T. E., J. Appl. Phys. 48, 907 (1977).CrossRefGoogle Scholar
[18] Bean, J. C., to be published J. Cryst. Growth, early 1985.Google Scholar
[19] Ota, Y., J. Cryst-Growth 61, 431 (1983).Google Scholar
[20] Gossman, H. J., Bean, J. C. and Feldman, L. C., Surf. Sci. 138, L175 (1984).Google Scholar
[21] Gossman, H. J., Bean, J. C., Feldman, L. C., McRae, E. G. and Robinson, I. K., submitted to J. Vac. Sci. Technol. A.Google Scholar
[22] Cerdeira, F., Pinczuk, A., Bean, J. C., Batlogg, B. and Wilson, B. A., Proc. 3rd Int. Conf. on MBE, San Francisco (Aug. 1984).Google Scholar
[23] Cerdeira, F., Pinczuk, A., Bean, J. C., Batlogg, B. and Wilson, B. A., to be published Appl. Phys. Lett.Google Scholar
[24] Cerdeira, F., Pinczuk, A. and Bean, J. C., submitted to Phys. Rev. Rapid. Comm.Google Scholar
[25] Hull, R., Gibson, J. M. and Bean, J. C., to be published Apph. Phys. Lett.Google Scholar
[26] Hull, R., Fiory, A. T., Bean, J. C., Gibson, J. M., Scott, L., Benton, J. L. and Nakahara, S., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, CA (Aug. 1984).Google Scholar
[27] Fiory, A. T., Bean, J. C., Hull, R. and Nakahara, S., submitted to Phys. Rev. Rapid Comm.Google Scholar
[28] Hwang, J. C. M., Kastalsky, A., Störmer, H. L. and Keramides, V. G., Appl. Phys. Lett. 44, 802 (1984).Google Scholar