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Molecular beam epitaxy of GaSb/AlSb optical device layers on Si(100)

Published online by Cambridge University Press:  25 February 2011

R. J. Malik ,
J. P. van der Ziel ,
B. F. Levine ,
C. G. Bethea ,
P. M. Petroff ,
J. Walker  and
R. Hamm
R. J. Malik
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. P. van der Ziel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
B. F. Levine
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
C. G. Bethea
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
P. M. Petroff
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Walker
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. Hamm
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy. High quality films were achieved in spite of the large lattice constant mismatch of 12%. Room temperature, optically pumped pulsed lasers emitting at 1.8μm have been demonstrated. Lateral photoconductive detectors with responsivities of 0.18 A/W have also been made. The film nucleation on the Si substrate was observed in-situ by reflection high energy electron diffraction. Characterization of the grown epilayers and preliminary optical device results are described.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 119
Copyright
Copyright © Materials Research Society 1986

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References

[1] Wang, W. I., Appl. Phys. Lett. 44, 1149 (1984).CrossRefGoogle Scholar
[2] Tsaur, B. Y. and Metze, G. M., Appl. Phys. Lett. 45, 535 (1984).CrossRefGoogle Scholar
[3] Masselink, W. T., Fischer, R., Klein, J., Henderson, T., Pearah, P., and Morkoc, H., Appl. Phys. Lett. 45, 457 (1984).CrossRefGoogle Scholar
[4] Fletcher, R. M., Wagner, D. K., and Ballantyne, J. M., Appl. Phys. Lett. 44, 967 (1984).CrossRefGoogle Scholar
[5] Akiyama, M., Kawarada, Y., and Kaminishi, K., J. Cryst. Growth 68, 21 (1984).CrossRefGoogle Scholar
[6] Tsaur, B. Y., Geis, M. W., Fan, J. C. C., and Gale, R. P., Appl. Phys. Lett. 10, 779 (1981).CrossRefGoogle Scholar
[7] Gale, R. P., Fan, J. C. C., Tsaur, B-Y., Turner, G. W., and Davis, F. M., IEEE Electron Device Lett. EDL–2, 169 (1981).CrossRefGoogle Scholar
[8] Nakano, T., Jap. J. Appl. Phys. 6, 854 (1967).CrossRefGoogle Scholar
[9] Zheludkov, V. M., Presnov, V. A., Savin, P. T., and Terletskaya, L. L., Soy. Phys. Semicond. 11, 547 (1977).Google Scholar
[10] Morizane, K., J. Cryst. Growth 88, 249 (1977).CrossRefGoogle Scholar
[11] Petroff, P. M., Gossard, A. C., Savage, A., and Wiegmann, W., J. Cryst. Growth 46, 172 (1979).CrossRefGoogle Scholar
[12] Shinoda, Y., Nishioka, T., and Ohmachi, Y., Jap. J. Appl. Phys. 22, L450 (1983).CrossRefGoogle Scholar
[13] Windhorn, T. H. and Metze, G. M., Appl. Phys. Lett. 47, 1028 (1985).CrossRefGoogle Scholar
[14] Sakai, S., Soga, T., Takeyasu, M., and Umeno, M., Jap. J. Appl. Phys. 24, L666 (1985).CrossRefGoogle Scholar
[15] Metze, G. M., Choi, H. K., and Tsaur, B. Y., Appl. Phys. Lett. 45, 1107 (1984).CrossRefGoogle Scholar
[16] Tonaka, T., Akiyama, M., Kawarada, Y., and Kaminishi, K., Jap. J. Appl. Phys. 23, L919 (1984).Google Scholar
[17] Chang, C. A.. Takaoka, H., Chang, L. L., and Esaki, L., Appl. Phys. Lett. 40, 983 (1982).CrossRefGoogle Scholar
[18] Griffitsh, G., Mohammed, K., Subbana, S., Kroemer, H., and Merz, J. L., Appl. Phys. Lett. 43, 1059 (1983).CrossRefGoogle Scholar
[19] Gotoh, H., Sasamoto, K., Kuroda, S., and Kimata, M., Phys. Stat. Sol. (A) 75, 641 (1983).CrossRefGoogle Scholar
[20] Gourley, P. L., Biefeld, R. M., and Dawson, L. R., Appl. Phys. Lett. 47, 482 (1985).CrossRefGoogle Scholar
[21] Bernstein, L. and Beals, R. J., J. Appl. Phys. 82, 122 (1961).CrossRefGoogle Scholar
[22] van der Ziel, J. P., Malik, R. J., Mikulyak, R. M., and Walker, J., (to be published Appl. Phys. Lett. 48, (1986)).Google Scholar