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Molecular Beam Epitaxy of Boron Nitride Thin Films and Their Analytical Characterization

Published online by Cambridge University Press:  15 February 2011

Robert F. Davis ,
Daniel J. Kester  and
K. Shawn Ailey
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695–7907, USA
Daniel J. Kester
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695–7907, USA
K. Shawn Ailey
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695–7907, USA
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Abstract

Boron nitride (BN) thin films have been grown on the (100) surfaces of Si, diamond, Ni and Cu via ion beam assisted deposition (IBAD) using electron beam evaporation of B in tandem with N and Ar ion bombardment within the ranges of substrate temperature and ion flux of 200–700°C and 0.20–0.30 mA/Cm2, respectively, Fourier-transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM) revealed a growth sequence of amorphous (a-BN), hexagonal (h-BN) and cubic (c-BN) layers on Si and diamond under most conditions. This sequence is attributed primarily to increasing biaxial compressive stress with film thickness due to interstitial Ar incorporation observed via Rutherford backscattering spectroscopy (RBS). The effect of deposition conditions, specifically substrate temperature and bombardment intensity, on the film growth was studied. Increasing the substrate temperature above 400°C led to the onset of the cubic phase at a greater film thickness, while increased ion flux led to earlier growth of this phase. These results may be explained by the relaxation of intrinsic stress in the films at higher temperatures due to increased adatom mobility and to increased intrinsic stress in the films resulting from increased ion bombardment, respectively. Lower temperatures led to mixed phase growth. A minimum substrate temperature (200–300°C) is required for nucleation and growth of single phase c-BN by this technique. A combination of h-BN and c-BN was deposited on Ni; only h-BN was obtained on Cu substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 139
Copyright
Copyright © Materials Research Society 1995

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Footnotes

*

Present Address: Armstrong World Industries, Research and Development, P. O. Box 3511, Lancaster, PA 17604.

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