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Molecular beam epitaxy growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2
Published online by Cambridge University Press: 30 July 2012
Abstract
Single-crystalline films of superconducting Sr1-xKxFe2As and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ~ 0.3.
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