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Molecular Beam Epitaxial Growth of ZnSe, ZnSSe and ZnMnSSe Layers on GaAs Substrates for Blue-Green Laser Structures

Published online by Cambridge University Press:  10 February 2011

Y. P. Chen ,
M. Saginur ,
C. C. Kim ,
S. Sivananthan ,
D. J. Smith  and
S.-C.Y. Tsen
Y. P. Chen
Affiliation:
University of Illinois at Chicago, Department of Physics, Microphysics Laboratory, Chicago, IL 60607
M. Saginur
Affiliation:
University of Illinois at Chicago, Department of Physics, Microphysics Laboratory, Chicago, IL 60607
C. C. Kim
Affiliation:
University of Illinois at Chicago, Department of Physics, Microphysics Laboratory, Chicago, IL 60607
S. Sivananthan
Affiliation:
University of Illinois at Chicago, Department of Physics, Microphysics Laboratory, Chicago, IL 60607
D. J. Smith
Affiliation:
Arizona State University, Center for Solid State Science and Department of Physics and Astronomy, Tempe, AZ 85287
S.-C.Y. Tsen
Affiliation:
Arizona State University, Center for Solid State Science and Department of Physics and Astronomy, Tempe, AZ 85287
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Abstract

Single layers of ZnSe, ZnSxSe1−x., and Znl−y.MnySxSe1−x., were grown on the GaAs(001). Realtime reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnSxSe1−x., and Znl−y.MnySxSe1−x., (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 337
Copyright
Copyright © Materials Research Society 1996

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