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Molecular Beam Epitaxial Growth and Dielectric Characterization of Ba0.6Sr0.4TiO3 Films

Published online by Cambridge University Press:  26 February 2011

P. Fisher ,
M. Skowronski ,
P. A. Salvador ,
M. Snyder ,
J. Xu ,
M. Lanagan ,
O. Maksimov  and
V. D. Heydemann
P. Fisher
Affiliation:
[email protected], Carnegie Mellon University, Materials Science and Engineering, Pittsburgh, PA, 15213, United States
M. Skowronski
Affiliation:
[email protected], Carnegie Mellon University, Materials Science and Engineering, Pittsburgh, PA, 15213, United States
P. A. Salvador
Affiliation:
[email protected], Carnegie Mellon University, Materials Science and Engineering, Pittsburgh, PA, 15213, United States
M. Snyder
Affiliation:
[email protected], Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, United States
J. Xu
Affiliation:
[email protected], Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, United States
M. Lanagan
Affiliation:
[email protected], Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, United States
O. Maksimov
Affiliation:
[email protected], Pennsylvania State University, Electro-Optics Center, 559A Freeport Rd., Freeport, PA, 16229, United States
V. D. Heydemann
Affiliation:
[email protected], Pennsylvania State University, Electro-Optics Center, 559A Freeport Rd., Freeport, PA, 16229, United States
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Abstract

Ba0.6Sr0.4TiO3 films were grown by molecular beam epitaxy on MgO(001) and LaAlO3(001) substrates. The growth mode was determined to be two-dimensional by in-situ reflection high-energy electron diffraction. The films were structurally and dielectrically characterized ex-situ using X-ray diffraction, Rutherford backscattering spectrometry, and split cavity resonance mode dielectrometry. The structural and dielectric properties of the Ba0.6Sr0.4TiO3 film grown on MgO were determined to be inferior to the film grown on LaAlO3, as was indicated by the broader rocking curve (0.59 deg. vs. 0.17 deg.) and higher dielectric loss (0.29 vs. 0.12).

Keywords

molecular beam epitaxy (MBE)oxideferroelectricity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T07-23
Copyright
Copyright © Materials Research Society 2007

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References

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