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Modifying Polycrystalline Films Through Ion Channelling

Published online by Cambridge University Press:  25 February 2011

R. B. Iverson  and
R. Reif
R. B. Iverson
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
R. Reif
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

A novel low-temperature process to enhance the grain size of a polycrystalline film on an amorphous substrate has been previously reported. In this process, ion implantation is used to selectively anorphize the film, and undamaged grains act as seed crystals in a subsequent low-temperature anneal. In this work, a 120 nm polycrystalline silicon film was implanted from three angles with phosphorous at 150°K. The total dose was l.0×l015/cm2 . Transmission electron micrographs after a partial anneal (700°C for 30 minutes) indicate that some crystallites survived implantation due to ion channelling in the (111) plane. After a 60 minute anneal at 700°C, 7 μm grains were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 543
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Nelson, R.S. and Mazey, D.J., J. Mat. Sci. 2, 211–216 (1967).Google Scholar
2. Reif, R. and Knott, J.E., Electron. Lett. 17, 586–588 (1981).Google Scholar
3. Kwizera, P. and Reif, R., Appl. Phys. Lett. 41, 379–381 (1982).Google Scholar
4. Gat, A., Gerzberg, L., Gibbons, J.F., Magee, T.J., Peng, J., and Hong, J.D., Appl. Phys. Lett. 33, 775–778 (1978).Google Scholar
5. Geis, M.W., Flanders, D.C., and Smith, H.I., Appl. Phys. Lett. 35, 71–74 (1979).Google Scholar
6. Geis, M.W., Antoniadis, D.A., Silversmith, D.J., Mountain, R.W., and Smith, H.I., Appl. Phys. Lett. 37, 454–456 (1980).Google Scholar
7. Eisen, F.H. and Welch, B., P. C. Atom. Coll., 111–127 (1969).Google Scholar
8. Barrett, J.d. and Jackson, D.P., Nuc. Instr. Meth. 170, 115–118 (1980).Google Scholar
9. Drosd, D. and Washburn, J., J. Appl. Phys. 53, 397–403 (1982).Google Scholar
10. Lau, S.S., J. Vac. Sci. Tech. 15, 1656–1661 (1978).Google Scholar
11. Zellama, K., Germain, P., Squelard, S., and Bourgoin, J.C., J. Appl. Phys. 50, 6995–7000 (1979).Google Scholar
12. Wada, Y. and Nishimatsu, S., J. Elchem. Soc. 125, 1499–1504 (1978).Google Scholar