Hostname: page-component-669899f699-2mbcq Total loading time: 0 Render date: 2025-04-26T10:40:38.686Z Has data issue: false hasContentIssue false
  • English
  • Français

Modified Oxide Properties from Dopant Effects at the Si-SiO2 Interface

Published online by Cambridge University Press:  26 February 2011

Michael A. Jackson ,
Lawrence Salvati ,
Roland L. Chin  and
Wayne A. Anderson
Michael A. Jackson
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
Lawrence Salvati
Affiliation:
Perkin-Elmer Physical Electronics Division, Five Progress Street, Edison, NJ 08820
Roland L. Chin
Affiliation:
Allied Chemical Corporation, Buffalo, NY 14210
Wayne A. Anderson
Affiliation:
State University of New York at Buffalo, Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
Get access

Abstract

Both thin, 60→140Å thick, and native oxides on As and P doped Si were studied via null ellipsometry and angle resolved ESCA. Results showed higher oxide growth rates to occur for higher surface concentrations of a given dopant. For similar surface concentrations, P-doped samples oxidized faster than As-doped, in both cases. Exact oxidation rates were not determined as results indicate that stoichiometric variations and oxidation of carbon contamination influence thickness determination of these oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 573
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Rajeswaran, G., Rao, V.J., Jackson, M.A., Thayer, M., Anderson, W.A. and Rao, B.B., IEEE Trans. Elec. Dev., ED–30, No. 12, 1840 (1983).Google Scholar
2. Rao, B.B., Ph.D. thesis, State University of New York at Buffalo, 1985.Google Scholar
3. Yu, Z. and Dutton, R.W., IEEE Elec. Dev. Lett., EDL–6, No. 10, 507 (1985).Google Scholar
4. Chor, E.F., Ashburn, P. and Bunnschweiler, A., IEEE Elec. Dev. Lett., EDL–6, No. 10, 516 (1985).Google Scholar
5. Taft, E. and Cordes, L., J. Electrochem. Soc., 126, No. 1, 131 (1979).Google Scholar
6. Herbots, N., Gloesner, D., Van Loenen, E.J. and Fischer, A.E.M.J., presented at the 1984 MRS Fall Meeting, Boston, MA., 1985 (unpublished).Google Scholar
7. Sai-Holasz, G.A., Short, K.T. and Williams, J. S., IEEE Elec. Dev. Lett., EDL–6, No. 6, 285 (1985).Google Scholar
8. McCrakin, F.L., NBS Tech. Note 479, 1969.Google Scholar
9. Vasquez, R.P. & Grunthaner, F.J., Sur. Sci., 99, 681 (1980).Google Scholar