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Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film
Published online by Cambridge University Press: 26 February 2011
Abstract
Modifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.
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- Copyright © Materials Research Society 1988