Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-19T08:45:36.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation*

Published online by Cambridge University Press:  21 February 2011

C. W. White ,
G. C. Farlow ,
H. Naramoto ,
C. J. Mchargue  and
B. R. Appleton
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
G. C. Farlow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
H. Naramoto
Affiliation:
JAERI, Tokai-mura, Japan
C. J. Mchargue
Affiliation:
Metals and Ceramics Division, ORNL
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

Physical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 24: Symposium B – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1983 , 163
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

REFERENCES

1. See for example, Ion Implantation in Semiconductors, ed. by Chernov, F., Borders, J. A. and Brice, D. K., Plenum Press, New York, 1976.Google Scholar
2. Treatise on Materials Science and Technology, Vol. 18, Ion Implantation, ed. by Hirvonen, J. K., Academic Press, New York, 1980.Google Scholar
2a Also see numerous articles in the Proc. of the 2nd and 3rd Inter. Conf. on Ion Beam Modification of Materials; Proceedings published in Nucl. Instrum. Methods 182/183 (1981) and 209/210 (1983).Google Scholar
3. Arnold, G. W., Krefft, G. B. and Norris, C. B., Appl. Phys. Lett. 25, 540 (1974).CrossRefGoogle Scholar
4. Krefft, G. B., Beezhold, W. and EerNisse, E. P., IEEE Trans. on Nucl. Sci. NS-22, 2247 (1975).Google Scholar
5. Luera, T. F., Borders, J. A. and Arnold, G. W., in Ion Implantation in Semiconductors, ed. by Chernov, F., Borders, J. A. and Brice, D. K., Plenum Press, New York, 1976, p. 285.Google Scholar
6. Evans, B. D., Hendricks, H. D., Bazzarre, F. D. and Bunch, J. M., Ref. 5, p. 265.Google Scholar
7. McHargue, C. J., Lewis, M. B., Appleton, B. R., Naramoto, H., White, C. W. and Williams, J. M., Proc. Inter. Conf. of the Science of Hard Materials Moren, Wyoming August 24–28, 1981. Google Scholar
8. McHargue, C. J., Naramoto, H., Appleton, B. R., White, C. W. and Williams, J. M., p. 147 in Metastable Materials Formation by Ion Implantation, ed. by Picraux, S. T. and Choyke, W. J., North Holland, New York, 1982.Google Scholar
9. Naramoto, H., White, C. W., Williams, J. M., McHargue, C. J., Holland, O. W., Abraham, M. M., and Appleton, B. R., J. Appl. Phys. 54, 683 (1983).Google Scholar
10. Naramoto, H., McHargue, C. J., White, C. W., Williams, J. M., Holland, O. W., Abraham, M. M., and Appleton, B. R., Nucl. Instrum. Methods 209/210, 1159 (1983).Google Scholar
11. McHargue, C. J., White, C. W., Appleton, B. R., Naramoto, H., Farlow, G. C., and Williams, J. M., in Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., North Holland, New York, in press.Google Scholar
12. Farlow, G. C., White, C. W., McHargue, C. J., and Appleton, B. R., in Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., North Holland, New York, in press.Google Scholar
13. McHargùe, C. J., Lewis, M. B., Appleton, B. R., Naramoto, H., White, C. W., and Williams, J. M., p. 451 in The Science of Hard Materials, ed. by Viswanadham, R.K., Rowcliffe, D. J., and Gurland, J., Plenum Press, New York, 1983.Google Scholar
14. The Stopping and Ranges of Ions in Matter, Vol. 4, ed. by Ziegler, J. F., Pergamon Press, New York, 1977.Google Scholar
15. Burnett, P. J. and Page, T. F., J. Mater. Sci., to be published.Google Scholar
16. Carnera, A., Drigo, A. V., and Mazzoldi, P., Rad. Eff. 49, 29 (1980).Google Scholar
17. Phase Diagrams for Ceramists, E. Levine, M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1964, Diagram #310.Google Scholar
18. Phase Diagrams for Ceramists, Levine, E. M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1969, Diagram #2095.Google Scholar
19. Phase Diagrams for Ceramists, Levine, E. M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1975, Diagram #4377.Google Scholar