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Modification Of Properties Of Ion-Beam-Sputtered Yttrium-Oxide Thin Films By Low-Energy Ion Bombardment

Published online by Cambridge University Press:  16 February 2011

K. A. Klemm ,
L. F. Johnson  and
M. B. Moran
K. A. Klemm
Affiliation:
Naval Weapons Center, Physics Division, Research Department, China Lake, CA 93555-6001
L. F. Johnson
Affiliation:
Naval Weapons Center, Physics Division, Research Department, China Lake, CA 93555-6001
M. B. Moran
Affiliation:
Naval Weapons Center, Physics Division, Research Department, China Lake, CA 93555-6001
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Abstract

The effect of low-energy ion bombardment on ion-beam-sputtered yttrium-oxide films was studied. Yttria films were subjected to argon ions accelerated by a potential of up to 500 V with current densities of up to 8 μA/cm2 and were deposited at differing substrate temperatures. Yttria films bombarded during deposition were found to be amorphous, and trends observed with increased ion energy include reduced amount of residual compressive stress, increased argon content, and decreased refractive index, depending on deposited energy and substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 295
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Harper, J.M.E., Cuomo, J.J., Gambino, R.J., and Kaufman, H.R., in Ion Bombardment Modification of Surfaces: Fundamentals and Applications, edited by Auciello, O. and Kelley, R. (Elsevier, Amsterdam, 1984).Google Scholar
2. Hoffman, D.W. and Gaerttner, M.R., J. Vac. Sci. Technol. 17(1), 425 (1980).Google Scholar
3. Kao, A.S., Hwang, C., Novotny, V.J., Deline, V.R., and Gorman, G.L., J. Vac. Sci. Technol. A 7(5), 2966 (1989).Google Scholar
4. Nigara, Y., Ishigame, M., and Sakutai, T., J. Phys. Soc. Jap. 30(2), 453 (1971).Google Scholar
5. Hoffman, R.W., Phys. Thin Films 3, 211 (1966).Google Scholar
6. Grow, D., Deposition Sciences, Inc., Santa Rosa, CA, private communication.Google Scholar
7. Price, J. and Simon, D., Naval Surface Warfare Center, Silver Spring, MD, private communication.Google Scholar
8. Roy, R.A., Cuomo, J.J., and Yee, D.S., J. Vac. Sci. Technol. A 6(3), 1621 (1988).Google Scholar
9. Panitz, J.K.G., Hills, C.R., and Tallant, D.R., J. Vac. Sci. Technol. A 8(3), 1313 (1990).Google Scholar
10. Tustison, R.W., Varitimos, T.E., Montanari, D.G., and Wahl, J.M., J. Vac. Sci. Technol. A 7(3), 2256 (1989).Google Scholar
11. Nigara, Y., Jap. J. Appl. Phys. 7(4) 404 (1968).Google Scholar
12. Emiliani, G. and Scaglione, S., J. Vac. Sci. Technol. A 5(4), 1824 (1987).Google Scholar
13. Martin, P.J. and Netterfield, R.P., in Handbook of Ion Beam Processing Technology, edited by Cuomo, J.J., Rossnagel, S.M., and Kaufman, H.R. (Noyes Publications, Park Ridge, NJ, 1989), p. 373.Google Scholar