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Modification of Ge2Sb2Te5 by the Addition of SiOx for Improved Operation of Phase Change Random Access Memory

Published online by Cambridge University Press:  01 February 2011

Jin-Seo Noh ,
Dong-Seok Suh ,
Sang Mock Lee ,
Kijoon H. P. Kim ,
Woong-Chul Shin ,
Eunhye Lee ,
Youn-Seon Kang ,
Ju-Cheol Park ,
Ki-Hong Kim  and
Yoonho Khang
Jin-Seo Noh
Affiliation:
[email protected], Samsung Advanced Institute of Technology, San 14-1, Nongseo-Dong, Giheung-Gu, Yongin, Gyeonggi-Do, 449-712, Korea, Republic of
Dong-Seok Suh
Affiliation:
[email protected], Korea, Republic of
Sang Mock Lee
Affiliation:
[email protected], Korea, Republic of
Kijoon H. P. Kim
Affiliation:
[email protected], Korea, Republic of
Woong-Chul Shin
Affiliation:
[email protected], Korea, Republic of
Eunhye Lee
Affiliation:
[email protected], Korea, Republic of
Youn-Seon Kang
Affiliation:
[email protected], Korea, Republic of
Ju-Cheol Park
Affiliation:
[email protected], Korea, Republic of
Ki-Hong Kim
Affiliation:
[email protected], Korea, Republic of
Yoonho Khang
Affiliation:
[email protected], Korea, Republic of
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Abstract

Conventional Ge2Sb2Te5 (GST) was modified by adding up a small amount of SiOx, using co-sputtering technique from multiple targets. The SiOx content was gradually increased by increasing the power applied to SiOx target, up to 8 volume percent. The sheet resistance of SiOx-containing GST exponentially increased, when the room-temperature-deposited samples were annealed at 300 °C. Transmission electron microscopy images revealed that no SiOx particulates were formed, which was confirmed by Gattan image filtering. It was indicated by x-ray diffraction patterns that the grain size of SiOx-containing GST is smaller than normal GST with lattice locally distorted at its crystalline state, suggesting that molecular SiOx is homogeneously distributed throughout the GST matrix. We observed that the crystallization temperature of SiOx-containing GST is gradually elevated by increasing the SiOx content, while the melting point decreased. These observations led to the reset current reduction, which is a critical requirement for the high density PRAM.

Keywords

phase transformationmemorysputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 888: Symposium V – Materials and Devices for Smart Systems II , 2005 , 0888-V05-09
Copyright
Copyright © Materials Research Society 2006

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References

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