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Modelling of the Dislocation Influence on Electrical Properties of Polycrystalline Silicon Cells

Published online by Cambridge University Press:  22 February 2011

H. El Ghitani  and
S. Martinuzzi
H. El Ghitani
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, Faculté des Sciences et Techniques de Saint-jérÔme, Université d'Aix- Marseille III, F-13397 Marseille Cedex 13.
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité des Semi-conducteurs, Faculté des Sciences et Techniques de Saint-jérÔme, Université d'Aix- Marseille III, F-13397 Marseille Cedex 13.
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Abstract

The influence of the density Ndis and recombination activity Sd of dislocations on the photocurrent Jsc, the spectral variation of Jsc and electron diffusion length Ln are computed by means of the Green's function. Sd is the surface recombination velocity of the space charge cylinder surrounding a dislocation line, assumed to be perpendicular to the illuminated surface of the cells.

It is found that the value and the spectral variation in the near infrared of Jsc and that of Ln, are dependent on Ndis and Sd, specially when Ndis and Sd are higher than 104 cm−2 and 104 cm s−1 respectively. A reasonnable agreement is obtained with experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 225
Copyright
Copyright © Materials Research Society 1988

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References

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