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Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon Crystals

Published online by Cambridge University Press:  10 February 2011

Yu. E. Egorov ,
Yu. N. Makarov ,
E. A. Rudinsky ,
E. M. Smirnov  and
A. I. Zhmakin
Yu. E. Egorov
Affiliation:
Fluid Mechanics Institute, University of Erlangen-Nürnberg, Cauerstr. 4, D-91058 Erlangen, Germany
Yu. N. Makarov
Affiliation:
Fluid Mechanics Institute, University of Erlangen-Nürnberg, Cauerstr. 4, D-91058 Erlangen, Germany
E. A. Rudinsky
Affiliation:
Department of Hydroaerodynamics, State Technical University of St. Petersburg, Russia
E. M. Smirnov
Affiliation:
Department of Hydroaerodynamics, State Technical University of St. Petersburg, Russia
A. I. Zhmakin
Affiliation:
A. F. Ioffe Physical Technical Institute, 26 Polytechnicheskaya str., 194021 St. Petersburg, Russia
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Abstract

Global model of oxygen transport in the melt and inert gas is proposed which is based on coupled two-dimensional stationary modeling of global heat transfer, laminar flow of inert gas and turbulent flow in Si melt, and transport of dissolved oxygen in the melt and SiO vapor in the gas. The model allows to study effects of process parameters like flow rate and pressure of inert gas, and rotation of the crucible on incorporation of oxygen into Si crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 181
Copyright
Copyright © Materials Research Society 1998

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References

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