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Modelinig of Dopant Diffusion and Associated Effects in Silicon

Published online by Cambridge University Press:  15 February 2011

Richard B. Fair
Richard B. Fair*
Affiliation:
Microelectronics Center of North Carolina, Post Office Box 12889Research Triangle Park, North Carolina 27709
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Abstract

Research in the area of dopant diffusion in Si has focused on identifying the specific mechanisms and point defects involved. Recent approaches include observing the effects of diffusion and doping on oxygen precipitation, stacking fault growth or shrinkage, enhanced/retarded diffusion of one dopant in the presence of another. Very few of these studies have yielded unambiguous interpretations as a result of the indirect nature of the experiments. However, taken together we can infer the relative importance of vacancies versus Si selfinterstitials in the diffusion of each dopant species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 61
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Fair, R. B. in Applied Solid State Science, Supplement 2B, Kahng, D. ed. (Academic Press, New York, 1981) pp. 1–103.Google Scholar
2. Gosele, U. and Strunk, H., Appl. Phys., 20, 265 (1979).CrossRefGoogle Scholar
3. Hu, S. M., J. Vac. Sci, Technol., 14, 17 (1977).Google Scholar
4. Seeger, A. and Chick, K. P., Phys. Stat. Sol, 29, 455 (1968).CrossRefGoogle Scholar
5. Hu, S. M., J. Appl. Phys., 45, 1567 (1974).Google Scholar
6. Watkins, G. D., in Effects Des Rayonnements Sur Leas Semiconductors (Dunod, Paris 1965).Google Scholar
7. Wills, G. N., Solis-State Electron., 12, 133 (1969).Google Scholar
8. Lin, A. M., Antoniadis, D. A. and Dutton, R. W., J. Electrochem. Soc., 128, 1131 (1981).Google Scholar
9. Booker, G. R. and Tunstall, W. J., Philos. Hag., 13, 71 (1966).Google Scholar
10. Gosele, U. and Frank, W. in Defects in Semiconductors, Narayan, J. and Tan, T. Y., eds. (North Holland, New York, 1981) p. 55.Google Scholar
11. Fair, R. B., J. Appl. Phys., 51, 5828 (1980).Google Scholar
12. Antoniadis, D. A. in Semiconductor Silicon 1981, Huff, H. R., Kriegler, R. J., Takeishi, Y., eds. (The Electrochemical Society, Inc., Pennington, NJ, 1981) pp. 947–962.Google Scholar
13. Mizuo, S. and Higuchi, H., Japan J. Appl. Phys., 20, 739 (1981).Google Scholar
14. Antoniadis, D. A. and Moskowitz, I., to be published in J. Appl. Phys., Oct. 1982.Google Scholar
15. Matthews, M. D. and Ashby, S. J., Phil. Mag., 27, 1313 (1973).Google Scholar
16. Gosele, U., Frank, W. and Seeger, A., unpublished.Google Scholar
17. Mizuo, M. and Higuchi, H., to be published.Google Scholar
18. Taniguchi, K., Kurosawa, K., and Kashiwagi, M., J. Electrochem. Soc., 127, 2243 (1980).Google Scholar
19. Fair, R. B., J. Electrochem. Soc., 128, 1360 (1981).CrossRefGoogle Scholar
20. Fair, R. B., J. Electrochem. Soc., 122, 800 (1975).Google Scholar
21. Fair, R. B., J. Electrochem. Soc., 125, 323 (1978).Google Scholar
22. Nabeta, Y., Uni, T., Kubo, S. and Taukamoto, H., J. Electrochem. Soc., 123, 1416 (1976).CrossRefGoogle Scholar
23. Murarka, S. P., Phys. Rev. B., 21, 692 (1980).Google Scholar
24. Hashimoto, H., Shibayama, H., Masaki, H., and Ishikawa, H., J. Electrochem. Soc., 123, 1899 (1976).CrossRefGoogle Scholar
25. Enomoto, Y., Ishloka, T., Matsumoto, S. and Miimi, T., unpublished.Google Scholar
26. Claeys, C. L., Declerck, G. J. and Van Overstraeten, R. J. in Semiconductor Characterization Techniques, Barnes, P. A. and Rozgonyi, G. A., edc. (The Electrochemical Society, Pennington, NJ, 1978) p. 366.Google Scholar
27. Claeys, C. L., Delcerck, G. J., and Van Overstraeten, R. J., Rev. Phys Appl., 13, 797 (1978).Google Scholar
28. Fair, R. B. and Carim, A., J. Electrochem. Soc., 129, 2319 (1982).Google Scholar
29. Fair, R. B., Meeting of the Electrochemical Society liontreal, Spring 1982.Google Scholar
30. Fair, R. B. and Meyer, W. G., Silicon Processing Symposium San Jose Jan. 1982, to be published.Google Scholar
31. Fair, R. B. and Tsai, J. C. C., J. Electrochem. Soc., 124, 1107 (1977).Google Scholar
32. Fair, R. B. in Impurity Doping Processes in Silicon, Wang, F. F. Y., ed. (North Holland Press, Amsterdam, 1981) pp. 317–442.Google Scholar
33. Mizuo, S. and Higuchi, H., Japan J. Appl. Phys., 21, 281 (1982).Google Scholar
34. Hu, S. M., J. Appl. Phys., 51 3666 (1980).Google Scholar
35. Mathiot, D. and Pfister, J. C., J. Appl. Phys., 53, 3053 (1982).Google Scholar
36. Fair, R. B., J. Appl. Phys., 50, 860 (1979).Google Scholar
37. Nobili, D., Armigliato, A., Finetti, M., and Solmi, S., J. Appl. Phys., 53, 1484 (1982).Google Scholar
38. Fogarrassy, R., Stuck, R., Muller, J. C., Grob, A., Grob, J. J., and Siffert, P., J. Electron Mater., 9, 1977 (1980).Google Scholar
39. Yoshida, M., Japan J. Appl. Phys., 19, 2427 (1980).Google Scholar
40. Guerrero, E., Potzl, H., Tielert, R., Grasserbauer, M., and Stingeder, G., J. Electrochem. Soc., 129, 1826 (1982).Google Scholar
41. Fair, R. B. and Weber, G. R., J. Appl. Phys., 44, 273 (1973).Google Scholar
42. Wada, Y. and Hashimoto, N., J. Electrochem. Soc., 172, 461 (1980).CrossRefGoogle Scholar
43. Murota, J., Arai, E., Kobayashi, K., and Kudo, K., J. Appl. Phys., 50, 804 (1979).Google Scholar
44. Matsumoto, S., Miimi, T., Murota, J., and Arai, E., J. Electrochem. Soc., 127, 1650 (1980).Google Scholar
45. Fair, R. B. in Semiconductor Silicon 1981, Huff, H. R., Kriegler, R. J., Takeishi, Y., eds. (The Electrochemical Society, Pennington, NJ, 1981) pp. 963–978.Google Scholar