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Modeling the Effect of Annealing and Regioregularity on Electron and Hole Transport Characteristics of Bulk Heterojunction Organic Photovoltaic Devices

Published online by Cambridge University Press:  01 February 2011

Shabnam Shambayati ,
Bobak Gholamkhass ,
Soheil Ebadian ,
Steven Holdcroft  and
Peyman Servati
Shabnam Shambayati
Affiliation:
[email protected], University of British Columbia, Electrical and Computer Engineering, Vancouver, Canada
Bobak Gholamkhass
Affiliation:
[email protected], Simon Fraser University, Chemistry, Burnaby, Canada
Soheil Ebadian
Affiliation:
[email protected], University of British Columbia, Electrical and Computer Engineering, Vancouver, Canada
Steven Holdcroft
Affiliation:
[email protected], Simon Fraser University, Chemistry, Burnaby, Canada
Peyman Servati
Affiliation:
[email protected]
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Abstract

In this study, the dark current-voltage characteristics of electron-only and hole-only poly(3-hexyl thiophene) (P3HT):[6,6]-phenyl C61-butyric acid methyl ester (PCBM) as a function of regioregularity (RR) and annealing time is investigated using the mobility edge (ME) model. This model is used to analyze the degradation of electron and hole mobilities as a function of annealing time for 93%-RR and 98%-RR P3HT:PCBM devices. The hole mobility is almost unchanged by the RR nature of P3HT and thermal annealing. The electron mobility, however, behaves differently after annealing. The electron mobility of 98%-RR devices, which is initially higher than that of the 93%-RR devices, experiences a steep decline with annealing. Based on ME analysis, this is due to an increase in trap states in the exponential tail caused by phase segregation of solid state blends of 98%-RR polymer and PCBM. The electron mobility of 93%-RR devices increases with annealing due to an optimization of nano-phase separated morphology.

Keywords

photovoltaicorganicelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1270: Symposia GG/HH/II – Organic Photovoltaics and Related Electronics-From Excitons to Devices , 2010 , 1270-HH14-56
Copyright
Copyright © Materials Research Society 2010

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References

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