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A Modeling Study of GaN Growth by MOVPE

Published online by Cambridge University Press:  21 February 2011

S.A. Safvi ,
J.M. Redwing ,
M.A. Tischler  and
T.F. Kuech
S.A. Safvi
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
J.M. Redwing
Affiliation:
Advanced Technology Materials, Danbury, CT 06810
M.A. Tischler
Affiliation:
Advanced Technology Materials, Danbury, CT 06810
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 255
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Zhang, X., Kung, P., Saxler, A., Walker, D., Wang, T.C., and Razeghi, M., Appl. Phys. Lett. 67 (12), 1745 (1995).Google Scholar
2 Kuech, T.F., Mat. Sci. Rep. 2, 1 (1987).Google Scholar
3 Almond, M.J., Drew, M.G.B., Jenkins, C.E., and Rice, D.A., J. Chem. Soc. Dalton Trans. (1992) 5–9.Google Scholar
4 Thon, Assaf and Kuech, T.F., AIChE Conference, 1995 Google Scholar
5 Bird, R.B. et al. , Stewart, W.E. and Lightfoot, E.N., Transport Phenomenon, Wiley, New York (1960)Google Scholar
6 Perry, R.H. & Chilton, C.H., Chemical Engineer’s Handbook, 5th ed., McGraw-Hill, New York (1977).Google Scholar
7 Reid, R.C., Prausnitz, J.M. and Sherwood, T.K., The Properties of Gases and Liquids, McGraw-Hill, New York (1977).Google Scholar
8 Safvi, S.A. and Kuech, T.F., Manuscript in preperation.Google Scholar
9 Mountziaris, T.J., Kalyanasundram, S. and Ingle, N.K., J. Cryst. Growth, 131, 283 (1993).Google Scholar
10 Hirschfelder, J.O. Curtiss, C.F. and Bird, R.B., Molecular Theory of gases and Liquids, Wiley, New York, (1967).Google Scholar
11 Jacko, M.J. and Price, S.W., Can. J. Chem., 41, 1560 (1963).Google Scholar
12 Almond, M.J., Jenkins, C.E., and Rice, D.A. and Hagen, K., J. Organomet. Chem. 439 (1992) 251–261.Google Scholar
13 Strang, G. & Fix, G., An Analysis of the Finite Element Method, Prentice Hall, Englewood Cliffs, NJ (1973).Google Scholar