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The Modeling Routes for the Chemical Vapor Deposition Process

Published online by Cambridge University Press:  15 February 2011

M. Pons ,
C. Bernard ,
H. Rouch  and
R. Madar
M. Pons
Affiliation:
S2MC, URA n° 413/ENSEEG/INPG, BP 75 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
C. Bernard
Affiliation:
LTPCM, URA n° 29/ENSEEG/INPG, BP 75 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
H. Rouch
Affiliation:
LMGP, URA n° 1109/ENSPG/LNPG, BP 46 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
R. Madar
Affiliation:
LMGP, URA n° 1109/ENSPG/LNPG, BP 46 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
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Abstract

The purpose of this article is to present the modeling routes for the chemical vapor deposition process with a special emphasis to mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-x Gex solid solution at 1300 K (system Si-Ge-Cl-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 15
Copyright
Copyright © Materials Research Society 1995

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