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The Modeling Routes for the Chemical Vapor Deposition Process

Published online by Cambridge University Press:  15 February 2011

M. Pons ,
C. Bernard ,
H. Rouch  and
R. Madar
M. Pons
Affiliation:
S2MC, URA n° 413/ENSEEG/INPG, BP 75 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
C. Bernard
Affiliation:
LTPCM, URA n° 29/ENSEEG/INPG, BP 75 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
H. Rouch
Affiliation:
LMGP, URA n° 1109/ENSPG/LNPG, BP 46 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
R. Madar
Affiliation:
LMGP, URA n° 1109/ENSPG/LNPG, BP 46 - Domaine Universitaire 38402 Saint-Martin d'Hères (France)
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Abstract

The purpose of this article is to present the modeling routes for the chemical vapor deposition process with a special emphasis to mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-x Gex solid solution at 1300 K (system Si-Ge-Cl-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 15
Copyright
Copyright © Materials Research Society 1995

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References

[1] Jensen, K.F., in Microelectronics Processing: Chemical Engineering Aspects, edited by Hess, D.W. and Jensen, K.F., Advances in Chemistry Series 221 (American Chemical Society, Washington DC, 1989) pp. 199–263.10.1021/ba-1989-0221.ch005Google Scholar
[2] Gokoglu, S.A., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T.M., Gallois, B.M. and Warren, J.W. (Materials Research Society Symp. 250, Pittsburgh, PA, 1992) pp 17–28.Google Scholar
[3] Kleijn, C.R., Werner, C., Modeling of Chemical Vapor Deposition of Tungsten Films (Birkhaüser, Verlag, 1993).10.1007/978-3-0348-7741-1Google Scholar
[4] Ho, P., Coltrin, M.E., Binkley, J.S., Melius, C.F., J. Phys. Chem., 89, 4647 (1985).10.1021/j100267a046Google Scholar
[5] Spear, K.E., Dirkx, R.R., High Temp. Sci., 27, 107 (1990).Google Scholar
[6] Pons, M., Bernard, C., Madar, R., Surf. Coat. Technol., 61, 274 (1993).10.1016/0257-8972(93)90238-JGoogle Scholar
[7] Allendorf, M.D., J. Electrochem. Soc., 140 (3), 747 (1993).10.1149/1.2056152Google Scholar
[8] Rosner, D. E., Collins, J., in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by Besmann, T.M. and Gallois, B.M. (Materials Research Society Symp. 168, Pittsburgh, PA, 1990) pp 43–48.Google Scholar
[9] Gokoglu, S.A., J. Electrochem. Soc., 135, 1562 (1988).10.1149/1.2096053Google Scholar
[10] Zhu, D., Sahai, Y., Metall. Trans., 322, 309 (1991).10.1007/BF02651230Google Scholar
[11] Pons, M., Barbier, J.N., Bernard, C., Madar, R., Appl. Surf. Sci., 73, 71 (1993).10.1016/0169-4332(93)90148-5Google Scholar
[12] Coltrin, M.E., Kee, R.J., Rupley, F.M., Inst. J. Chem. Kin., 23, 1111 (1991).10.1002/kin.550231205Google Scholar
[13] Coltrin, M.E., Kee, R.J., Miller, J.A., J. Electrochem. Soc., 133, 1206 (1986).10.1149/1.2108820Google Scholar
[14] Coltrin, M.E., Kee, R.J., Evans, G.H., J. Electrochem. Soc., 136, 819 (1989).10.1149/1.2096750Google Scholar
[15] Couderc, J.P., Duverneuil, P., J. Electrochem. Soc., 139, 296 (1992).Google Scholar
[16] Allendorf, M.D., Kee, R.J., J. Electrochem. Soc., 138 (3), 1841 (1991).10.1149/1.2085688Google Scholar
[17] Gokoglu, S.A., Kuczmarski, M.A., in CVD-XII International Symposium on Chemical Vapor Deposition, edited by Jensen, K.F. and Cullen, G.W., Proceeding Volume 93–2 (The Electrochemical Society, Pennington, NJ, 1993) pp. 392–400.Google Scholar
[18] Blanquet, E., Gokoglu, S.A., in ref. 17, 103–109.Google Scholar
[19] Mountziaris, T.J., Jensen, K.F., J. Crystal Growth, 138, 2426 (1991).Google Scholar
[20] Frenklach, M., Wang, H., Phys. Rev., B 43, 1520 (1991).10.1103/PhysRevB.43.1520Google Scholar
[21] Barbier, J.N., Bernard, C., Proceedings of the 15 th Calphad Meeting, edited by Kaufman, B.L., Calphad (1986) 206.Google Scholar
[22] SGTE databank, Scientific Group Thermodata Europe, BP 66, 38402 Saint-Martin d'Hères, France.Google Scholar
[23] Rouch, H., PhD Thesis, Institut National Polytechnique de Grenoble, 1994.Google Scholar
[24] Bergman, C., Chastel, R., Castanet, R., J. Phase Equi., 13, 2 (1992).Google Scholar
[25] Pons, M., Benezech, A., Huguet, P., Gaufres, R., Diez, Ph., J. CVD (in press).Google Scholar
[26] Bird, R.B., Stewart, W.E., Lightfoot, E.N., Transport Phenomena, (Wiley, NY, 1960).Google Scholar
[27] Flux Expert, DT2I, Chemin des Prèles, 38240 Meylan, France, 1994.Google Scholar