Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-28T09:06:00.923Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of the Diffusion of Hydrogen in Silicon

Published online by Cambridge University Press:  25 February 2011

D. Mathiot ,
D. Ballutaud ,
P. De Mierry  and
M. Aucouturier
D. Mathiot
Affiliation:
CNET-CNS, BP. 98, 38243 Meylan Cédex, France
D. Ballutaud
Affiliation:
Laboratoire Physique des Solides, CNRS, 1, place A. Briand, 92135 Meudon Principal, France
P. De Mierry
Affiliation:
Laboratoire Physique des Solides, CNRS, 1, place A. Briand, 92135 Meudon Principal, France
M. Aucouturier
Affiliation:
Laboratoire Physique des Solides, CNRS, 1, place A. Briand, 92135 Meudon Principal, France
Get access

Abstract

A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperature data. On the other hand, a systematic variation of DH+ with the boron concentration forces us to conclude that some still unknown interactions take place and contribute to hydrogen trapping in highly doped p-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 401
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Van Wieringen, A. and Warmoltz, N., Physica 22, 849 (1956)Google Scholar
2 Johnson, N.M. and Moyer, M.D., Appl. Phys. Lett. 46,787 (1985)Google Scholar
3 Johnson, N.M., Herring, C. and Chadi, D.J., Phys. Rev. Lett. 56, 769 (1986)Google Scholar
4 Mathiot, D., Phys. Rev. B 40, 5867 (1989)Google Scholar
5 Johnson, N.M. and Herring, C., in Shallow Impurities in Semiconductors 1988, edited by Monemar, B. (Inst. Phys. Conf. Ser. 95, Bristol, 1989), p. 415 Google Scholar
6 Corbett, J.W., Lindström, J.L. and Pearton, S.J., in Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J. and Davies, G. (Mater. Res. Soc. Proc. 104, Pittsburgh, 1988), p. 229 Google Scholar
7 Pearton, S.J., Corbett, J.W. and Shi, T.S., Appl. Phys. A43, 153 (1987)Google Scholar
8 Van de Walle, C.G., Bar-Yam, Y. and Pantelides, S.T., Phys. Rev. Lett. 60,2761 (1988)Google Scholar
9 See, e.g., Seager, C.H. and Anderson, R.A., Appl. Phys. Lett. 53, 1181 (1988)Google Scholar