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Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes

Published online by Cambridge University Press:  18 March 2011

Tamba Tugbawa ,
Tae Park ,
Brian Lee  and
Duane Boning
Tamba Tugbawa
Affiliation:
Microsystems Technology Laboratories, MIT Rm 39-567, Cambridge, MA; Paul Lefevre, International SEMATECH, Austin, TX; Lawrence Camilletti, Conexant Systems, Newport Beach, CA.
Tae Park
Affiliation:
Microsystems Technology Laboratories, MIT Rm 39-567, Cambridge, MA; Paul Lefevre, International SEMATECH, Austin, TX; Lawrence Camilletti, Conexant Systems, Newport Beach, CA.
Brian Lee
Affiliation:
Microsystems Technology Laboratories, MIT Rm 39-567, Cambridge, MA; Paul Lefevre, International SEMATECH, Austin, TX; Lawrence Camilletti, Conexant Systems, Newport Beach, CA.
Duane Boning
Affiliation:
Microsystems Technology Laboratories, MIT Rm 39-567, Cambridge, MA; Paul Lefevre, International SEMATECH, Austin, TX; Lawrence Camilletti, Conexant Systems, Newport Beach, CA.
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Abstract

Wepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden copper removal stage. The model uses contact mechanics to correctly apportion polishing pressure on all sections of an envelop function that reflects the long-range thickness differences on the chip, or region of interest. With the pressure over the entire envelop known, the density-step-height part of the model is then used to compute the amount of material removed in the local “up-areas” and “down-areas”. ThismodelshowspromiseinaccuratelyandefficientlypredictingpostCMPcopperanddielectric thicknesses across an entire chip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M4.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1]Tugbawa, T., Park, T., Boning, D., Pan, T., Li, P., Hymes, S., Brown, T., and Camilletti, L., “Model-ing of Pattern Dependencies for Multi-Step Copper Chemical-Mechanical Polishing Processes,” CMP-MIC 2001 Proceedings, pp. 65–68, March 2001.10.1557/PROC-671-M4.3Google Scholar
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